型号 功能描述 生产厂家&企业 LOGO 操作
VSSAF3M10

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

VishayVishay Siliconix

威世科技威世科技半导体

VSSAF3M10

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:111.47 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

VishayVishay Siliconix

威世科技威世科技半导体

Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

• Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering

VishayVishay Siliconix

威世科技威世科技半导体

Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

• Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering

VishayVishay Siliconix

威世科技威世科技半导体

Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

• Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering

VishayVishay Siliconix

威世科技威世科技半导体

Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

• Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering

VishayVishay Siliconix

威世科技威世科技半导体

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:111.47 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:111.47 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

封装/外壳:DO-221AC,SMA 扁平引线 包装:卷带(TR) 描述:DIODE SCHOTTKY 100V 3A DO221AC 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

封装/外壳:DO-221AC,SMA 扁平引线 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 100V 3A DO221AC 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:111.47 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:111.47 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

200mA DUAL H-BRIDGE

文件:52.63 Kbytes Page:4 Pages

SEME-LAB

Seme LAB

3-Phase 208/220/120/127V 10kVA/kW Double-Conversion UPS - Unity PF, No Internal Battery Modules

文件:198.31 Kbytes Page:6 Pages

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更新时间:2025-8-8 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY(威世)
24+
SlimSMA(DO221AC)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
Vishay(威世)
24+
NA/
8735
原厂直销,现货供应,账期支持!
Vishay
24+
DO-221A
8000
只做自己库存 全新原装进口正品假一赔百 可开13%增
VISHAY
22+
NA
4183
原装正品支持实单
VISHAY/威世
21+
NA
30000
百域芯优势 实单必成 可开13点增值税
VISHAY/威世
23+
NA
12730
原装正品代理渠道价格优势
Vishay(威世)
23+
N/A
11800
VISHAY
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
VISHAY/美国威世公司
23+
DO-221AC
5000
公司只做原装,可配单
vishay
25+
DO-221AC-2
80000
深圳现货,原装正品

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