Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see

INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1 Features • Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: –

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third g

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR210, SiHFR210) • Straight lead (IRFU210, SiHFU210) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

Wireless Connectivity Edge Intelligence Server

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