High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

DESCRIPTION VSML3710 is an infrared, 940 nm emitting diode in GaAlAs, MQW (multi quantum well) technology with high radiant power, molded in a PLCC-2 package for surface mounting (SMD). FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.

封装/外壳：2-PLCC 包装：卷带（TR）剪切带（CT） 描述：EMITTER IR 940NM 100MA 2-PLCC 光电器件 LED 发射器 - 红外，紫外，可见光

High Power Infrared Emitting Diode

文件：139.91 Kbytes Page：7 Pages

High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs

文件：141.75 Kbytes Page：6 Pages

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

文件：142.26 Kbytes Page：6 Pages

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description TSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant power at wavelength of 870 nm. Features • High radiant power • High speed tr = 30 ns • High modulation b

High Speed Infrared Emitting Diode, 890 nm RoHS Compliant, Released for Lead (Pb)-free Solder Process

文件：142.5 Kbytes Page：8 Pages

High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero

文件：136.48 Kbytes Page：6 Pages

High Speed Infrared Emitting Diode

文件：132.41 Kbytes Page：6 Pages

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

文件：143.06 Kbytes Page：6 Pages