N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The 8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product 8810 is Pb-free (meets RO

Dual N-Channel Enhancement Mode MOSFET

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Thermally Conductive Adhesive Transfer Tapes

文件：175.98 Kbytes Page：7 Pages

N-channel power MOS field effect tube

文件：270.42 Kbytes Page：1 Pages

Dual N-Channel 25-V (D-S) MOSFET

文件：973.56 Kbytes Page：8 Pages