MOSFET

VS6604GP N沟道增强型功率MOSFET采用VitoMOSⅡ技术制造，具有更低的导通损耗和开关损耗以及优越的开关性能。该产品可广泛应用于电池保护、快充、马达驱动等领域。 1.VitoMOSⅡ 技术\n2.极低的Qg\n3.更低的导通损耗和开关损耗\n4.100%雪崩测试\n5.无铅电镀；符合 RoHS 标准;

60 W XENON FLASH LAMP SERIES

FEATURES ■ High Stability: Fluctuation (p-p) 3 Max. ■ High Input Energy: 1 J (per one flash) ■ Long Life: 8 × 107 flashes Min. ■ Short Arc: 3 mm ■ Spectral Distribution: 190 nm to 2000 nm (Sapphire glass window type) ■ High Repetition Rate Meeting TV rate: 60 Hz ■ Short flash pulse-width (

Ultrahigh-Speed Switching Applications

N-Channel Silicon MOSFET Features • Low ON-resistance. • Ultrahigh-speed switching. • 1.5V drive. • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

9 AMP ADJUSTABLE INTEGRATED SWITCHING REGULATOR

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