MOSFET

P沟道增强型功率MOSFET采用Trench工艺针对更低Rds(on)和更高载流能力进行优化。该类产品非常适合要求高性能和耐用性的中低频应用，如马达驱动和负载开关等。 1.较低的导通损耗和开关损耗\n2.雪崩能力强\n3.100%雪崩测试\n4.无铅电镀；符合 RoHS 标准；无卤素;

Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) Controller

The ISL6522 provides complete control and protection for a DC-DC converter optimized for high-performance microprocessor applications. It is designed to drive two N-Channel MOSFETs in a synchronous rectified buck topology. The ISL6522 integrates all of the control, output adjustment, monitoring an

Single-Chip 4-Bit Microcomputers for Medium/Large-Scale Control-Oriented Applications

Single-Chip 4-Bit Microcomputers for Medium/Large-Scale Control-Oriented Applications The LC6520C/H are single-chip 4-bit microcomputers that contain a 4K-byte ROM, 1K-bit RAM, have 42 pins, and are fabricated using CMOS process technology.

Single-Chip 4-Bit Microcomputers for Medium/Large-Scale Control-Oriented Applications

Single-Chip 4-Bit Microcomputers for Medium/Large-Scale Control-Oriented Applications The LC6520C/H are single-chip 4-bit microcomputers that contain a 4K-byte ROM, 1K-bit RAM, have 42 pins, and are fabricated using CMOS process technology.

PNP (AMPLIFIER TRANSISTOR)

AMPLIFIER TRANSISTOR

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free