N-Channel MOSFET uses advanced trench technology

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MOSFET

N沟道增强型功率MOSFET采用Trench工艺针对更低Rds(on)和更高载流能力进行优化。该类产品非常适合要求高性能和耐用性的中低频应用，如快充等。 1.较低的导通损耗和开关损耗\n2.雪崩能力强\n3.100%雪崩测试;

Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit

The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8

Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit

The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8

Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit

The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8

Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit

The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8

Bilateral Trigger Diodes (DIACS)

Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover v