MOSFET

N沟道增强型功率MOSFET采用Trench工艺针对更低Rds(on)和更高载流能力进行优化。该类产品非常适合要求高性能和耐用性的中低频应用，如快充等。\n\n 1.较低的导通损耗和开关损耗\n2.雪崩能力强\n3.100%雪崩测试\n;

High speed and High performance 4-Bit Microcontroller

GENERAL DESCRIPTION The MSM6404A microcontroller is a low-power device implemented in complementary metal oxide semiconductor technology. The MSM6404A is optimized for high-speed processing and complicated-control applications. The MSM6404VS is a CMOS 4-bit microcontroller that employs an ex

Silicon Unilateral Switch (SUS)

Description: The NTE6404 is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an “ideal” four layer diode. The device is designed to switch at 8 volts with a 0.02/°C temperature coefficient. A gate lead is provided to elim

RF POWER TRANSISTOR NPN SILICON

文件：276.93 Kbytes Page：10 Pages

5 V mixer/oscillator-PLL synthesizers for hyperband tuners

文件：221.55 Kbytes Page：32 Pages

5 V mixer/oscillator-PLL synthesizers for hyperband tuners

文件：221.55 Kbytes Page：32 Pages