N-Channel Mosfet

● N-Channel\n● Enhancement mode\n● Very low on-resistance RDS(on) @ VGS=4.5 V\n● Fast Switching\n●100% Avalanche Tested\n● Pb-free lead plating， RoHS compliant;

Silicon Dual Schottky Rectifier

Description: The NTE6085 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: ● Plastic Package ● Metal to Silicon Rectifier, Majority Carrier Conduction ● Low Power Loss, High Efficiency

Silicon N Channel IGBT High Speed Power Switching

Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low collector to emitter saturation voltage

Silicon N Channel IGBT High Speed Power Switching

Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low collector to emitter saturation voltage

Silicon Monolithic Integrated Circuit

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3A Low Dropout Positive Regulator

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