Power Rectifiers Diodes (T-modules), 40 A to 110 A

FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL E78996 approved • Designed and qualified for industrial level • Material categorization

封装/外壳：D-55 T 模块 包装：散装 描述：DIODE GEN PURP 100V 40A D-55 分立半导体产品 二极管 - 整流器 - 单

Power Rectifiers Diodes (T-Modules), 40 A to 110 A

Power Rectifiers Diodes (T-modules), 40 A to 110 A

FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL E78996 approved • Designed and qualified for industrial level • Material categorization

封装/外壳：D-55 T 模块 包装：散装 描述：DIODE GEN PURP 1KV 40A D-55 分立半导体产品 二极管 - 整流器 - 单

Power Rectifiers Diodes (T-Modules), 40 A to 110 A

Standard Recovery Diodes, (Stud Version), 40 A

FEATURES • High surge current capability • Stud cathode and stud anode version • Leaded version available • Types up to 1600 V VRRM • RoHS compliant • Designed and qualified for multiple level TYPICAL APPLICATIONS • Battery charges • Converters • Power supplies

SILICON POWER DIODES

FEATURES • All Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic * Available in metric and UNF thread

Si Rectifiers

Features ■ High surge current capability ■ Stud cathode and stud anode version ■ Leaded version available ■ Types up to 1600V VRRM Typical Applications ■ Battery charges ■ Converters ■ Power supplies ■ Machine tool controls ■ Welding

SILICON POWER DIODES

FEATURES • All Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic * Available in metric and UNF thread

Standard Recovery Diodes (Stud and Lead Type)

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