Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 80 A

FEATURES • High speed trench gate field-stop IGBT positive temperature coefficient • TJ maximum = 175 °C • FRED Pt® anti-parallel diodes with ultrasoft reverse recovery • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file

Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 80 A

FEATURES • High speed trench gate field-stop IGBT positive temperature coefficient • TJ maximum = 175 °C • FRED Pt® anti-parallel diodes with ultrasoft reverse recovery • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file

封装/外壳：SOT-227-4，miniBLOC 包装：托盘 描述：IGBT MOD 600V 123A 454W SOT227 分立半导体产品 晶体管 - IGBT - 模块

Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 600 A

Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 80 A

FEATURES • High speed trench gate field-stop IGBT positive temperature coefficient • TJ maximum = 175 °C • FRED Pt® anti-parallel diodes with ultrasoft reverse recovery • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file