Insulated Gate Bipolar Transistor (Trench IGBT), 80 A

FEATURES • Trench IGBT technology • Positive VCE(on) temperature coefficient • Square RBSOA • 10 μs short circuit capability • HEXFRED® low Qrr, low switching energy • TJ maximum = 150 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline

Insulated Gate Bipolar Transistor (Trench IGBT), 80 A

FEATURES • Trench IGBT technology • Positive VCE(on) temperature coefficient • Square RBSOA • 10 μs short circuit capability • HEXFRED® low Qrr, low switching energy • TJ maximum = 150 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline

封装/外壳：SOT-227-4，miniBLOC 包装：管件 描述：IGBT MOD 1200V 139A 658W SOT227 分立半导体产品 晶体管 - IGBT - 模块

Insulated Gate Bipolar Transistor (Trench IGBT), 80 A

Insulated Gate Bipolar Transistor (Trench IGBT), 80 A

FEATURES • Trench IGBT technology • Positive VCE(on) temperature coefficient • Square RBSOA • 10 μs short circuit capability • HEXFRED® low Qrr, low switching energy • TJ maximum = 150 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline