DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology

FEATURES • 1200 V IGBT trench and field stop technology with positive temperature coefficient • Low switching losses • Maximum junction temperature 175 °C • 10 μs short circuit capability • Low inductance case • HEXFRED® antiparallel and series diodes with soft reverse recovery • Isolated

DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology

FEATURES • 1200 V IGBT trench and field stop technology with positive temperature coefficient • Low switching losses • Maximum junction temperature 175 °C • 10 μs short circuit capability • Low inductance case • HEXFRED® antiparallel and series diodes with soft reverse recovery • Isolated

DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology

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封装/外壳：双 INT-A-PAK（3 + 8） 包装：托盘 描述：IGBT MOD 1200V 341A INT-A-PAK 分立半导体产品 晶体管 - IGBT - 模块

DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology

FEATURES • 1200 V IGBT trench and field stop technology with positive temperature coefficient • Low switching losses • Maximum junction temperature 175 °C • 10 μs short circuit capability • Low inductance case • HEXFRED® antiparallel and series diodes with soft reverse recovery • Isolated

DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology

FEATURES • 1200 V IGBT trench and field stop technology with positive temperature coefficient • Low switching losses • Maximum junction temperature 175 °C • 10 μs short circuit capability • Low inductance case • HEXFRED® antiparallel and series diodes with soft reverse recovery • Isolated