Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A

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封装/外壳：DO-203AA，DO-4，接线柱 包装：卷带（TR） 描述：DIODE GEN PURP 900V 12A DO203AA 分立半导体产品 二极管 - 整流器 - 单

Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V

Medium Power Silicon Rectifier Diodes, 12 A

FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

12 AMP MEDIUM POWER SILICON RECTIFIER DIODES

Description/Features ■ Voltage rating from 50 to 1,000 volts ■ High surge capability ■ Low thermal impedance ■ High temperature rating ■ Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260

STANDARD RECOVERY RECTIFIERS

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Medium Power Silicon Rectifier Diodes, 12 A

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