Power Silicon Rectifier Diodes, (Stud Version), 35 A, 40 A, 60 A

FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

封装/外壳：DO-203AB，DO-5，接线柱 包装：卷带（TR） 描述：DIODE GEN PURP 100V 60A DO203AB 分立半导体产品 二极管 - 整流器 - 单

Power Silicon Rectifier Diodes, (Stud Version), 35 A, 40 A, 60 A

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Seal Construction ● Glass Passivated Die ● VRRM to 1600V ● 1050 Amps Surge Rating

DEVICE HIGH POWER STANDARD

Features • High Surge Capability • Types up to 600 V VRRM

Standard Recovery Diode, 60A

Features ● Glass passivated die ● Low forward voltage drop ● High surge capability ● Low leakage current ● Normal and Reverse polarity ● Metric and UNF threads available

35,40,and 60 Amp Power Silicon Rectifier Diodes

35,40,and 60 Amp Power Silicon Rectifier Diodes

STUD MOUNTED SIKCON POWER RECTIFIERS

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