RF POWER VERTICAL MOSFET

RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. FEATURES • Improved Ruggedness V

RF POWER VERTICAL MOSFET

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封装/外壳：M174 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET RF PWR N-CH 50V 150W M174 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF VDMOS Power Devices

RF VDMOS Power Devices

ROHS

RF POWER VERTICAL MOSFET

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RF POWER VERTICAL MOSFET

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RF POWER VERTICAL MOSFET

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RF POWER VERTICAL MOSFET

文件：122.87 Kbytes Page：5 Pages

RF POWER VERTICAL MOSFET

文件：122.87 Kbytes Page：5 Pages

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF MOSFET (VDMOS) 140V 150W 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER VERTICAL MOSFET

文件：123 Kbytes Page：5 Pages

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

Silicon epitaxial planar type

Features 1. Short reverse recovery time trr 2. Small terminal capacitance, Ct

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

L-BAND SPDT SWITCH

DESCRIPTION The PPG152TA is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in as original 6 pin mini-mold that is smalle