RF VDMOS Power Devices

ROHS

封装/外壳：SOT-262A1 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF MOSFET (VDMOS) 140V 150W 175M 分立半导体产品 晶体管 - FET，MOSFET - 射频

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF MOSFET (VDMOS) 140V 150W 分立半导体产品 晶体管 - FET，MOSFET - 射频

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

Silicon epitaxial planar type

Features 1. Short reverse recovery time trr 2. Small terminal capacitance, Ct

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

L-BAND SPDT SWITCH

DESCRIPTION The PPG152TA is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in as original 6 pin mini-mold that is smalle