Dual N-/Dual P-Channel 30-V (D-S) MOSFETs

features
Low On-Resistance: 0.8/1.6

Low Threshold: 1.5/–3.1 V
Low Input Capacitance: 38/60 pF
Fast Switching Speed: 9/16 ns
Low Input and Output Leakage benefits
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error V

Dual N-/Dual P-Channel 30-V (D-S) MOSFETs

Dual N-/Dual P-Channel 30-V (D-S) MOSFETs

文件：50.43 Kbytes Page：6 Pages

Dual N-/Dual P-Channel 30-V (D-S) MOSFETs

features
Low On-Resistance: 0.8/1.6

Low Threshold: 1.5/–3.1 V
Low Input Capacitance: 38/60 pF
Fast Switching Speed: 9/16 ns
Low Input and Output Leakage benefits
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error V

MICROWAVE CW BIPOLAR

[ACRIAN INC] GENERAL DESCRIPTION The 3001 is a common base transistor capable of providing 1 Watts of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed telemetry and telecommunications applications. It uses gold metalization and diffused ballasting to p

KK Maxi-3.96mm & 5.08mm Modular Interconnection System

KEY FEATURES ■ Available on 3.96 mm and 5.08 mm center spacings ■ Polarisation via insertable keys and pegs ■ Allows connections anywhere on the board ■ Double cantilever style terminal ■ Selective gold plating options ■ End-to-end stacking capabilities ■ Locking ramp for improved mated ret

1 Watt - 28 Volts, Class C Microwave 3000 MHz

GENERAL DESCRIPTION The 3001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

RF Manual 16th edition

KNOB

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