P-Channel 60-V (D-S) MOSFET

FEATURES • High-Side Switching • Low On-Resistance: 8
• Low Threshold: −1.9 V • Fast Switching Speed: 16 ns • Low Input Capacitance: 15 pF BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Switching • Easily Driven Without Buffer AP

P-Channel 60-V (D-S) MOSFET

Description: P-Channel, 60 V (D-S) MOSFET Package: SOT-23 Pin Out: Identical

SIPMOS Small-Signal Transistor

SIPMOS® Small-Signal Transistor ● VDS − 60 V ● ID − 0.18 A ● RDS(on) 10 Ω ● P channel ● Enhancement mode

丝印代码：T50*；P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu

N-Channel Enhancement-Mode MOS Transistors

Features ● Zener Diode Input Protected ● Low On-Resistance: 3 Ω ● Ultralow Threshold: 1.2 V ● Low Input Capacitance: 38 pF ● Low Input and Output Leakage Benefits ● Extra ESD Protection ● Low Offset Voltage ● Low-Voltage Operation ● High-Speed, Easily Driven ● Low Error Voltage Appli

N-Channel Enhancement-Mode MOS Transistors

Features ● Zener Diode Input Protected ● Low On-Resistance: 3 Ω ● Ultralow Threshold: 1.2 V ● Low Input Capacitance: 38 pF ● Low Input and Output Leakage Benefits ● Extra ESD Protection ● Low Offset Voltage ● Low-Voltage Operation ● High-Speed, Easily Driven ● Low Error Voltage Appli

N-Channel Enhancement-Mode Vertical DMOS FETs

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