P-CHANNEL ENHANCEMENT MODE D MOS FETS

文件：135.52 Kbytes Page：4 Pages

1.0 Ampere Schottky Power Rectifiers

Features • 0.5 ampere; forward voltage less than 460 mv. • 400 milliwatt Power Dissipation package. • Compact surface mount package with same footprint as mini-melf.

SURFACE MOUNT SCHOTTKY BARRIER DIODES

FEATURES • Low turn-on voltage • Fast switching • PN Junction Guard Ring for Transient and ESD Protection.

SCHOTTKY RECTIFIER

DESCRIPTION Single Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packages in SOD-123, these devices are intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the small size of the p

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 400 Volt VDS * RDS(on)=50Ω

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 400 Volt VDS * RDS(on)=150Ω