位置：首页 > IC中文资料第1289页 > VNV14N04
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VNV14N04 | ?쒹MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET Description TheVNB14N04,VNK14N04FMandVNV14N04aremonolithicdevicesmadeusingSTMicroeletronicsVIPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50kHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechip | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
VNV14N04 | OMNIFETfullyautoprotectedPowerMOSFET Description TheVNB14N04,VNK14N04FMandVNV14N04aremonolithicdevicesmadeusingSTMicroeletronicsVIPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50kHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechip | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
VNV14N04 | 封装/外壳：PowerSO-10 裸露底部焊盘 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
封装/外壳：PowerSO-10 裸露底部焊盘 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
?쒹MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET Description TheVNB14N04,VNK14N04FMandVNV14N04aremonolithicdevicesmadeusingSTMicroeletronicsVIPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50kHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechip | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
OMNIFETfullyautoprotectedPowerMOSFET Description TheVNB14N04,VNK14N04FMandVNV14N04aremonolithicdevicesmadeusingSTMicroeletronicsVIPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50kHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechip | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
?쒹MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET Description TheVNB14N04,VNK14N04FMandVNV14N04aremonolithicdevicesmadeusingSTMicroeletronicsVIPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50kHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechip | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
OMNIFETfullyautoprotectedPowerMOSFET Description TheVNB14N04,VNK14N04FMandVNV14N04aremonolithicdevicesmadeusingSTMicroeletronicsVIPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50kHzapplications.Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechip | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
?쒹MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET DESCRIPTION TheVNP14N04isamonolithicdevicemadeusingSTMicroelectronicsVIPowerTechnology,Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50KHzapplications.Built-inthermalshut-down,linearcurrentlimitationandovervoltageclampprotectthechipinharshenvi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
VNV14N04产品属性
- 类型
描述
- 型号
VNV14N04
- 功能描述
电源开关 IC - 配电 N-Ch 42V 14A OmniFET
- RoHS
否
- 制造商
Exar
- 输出端数量
1
- 开启电阻（最大值）
85 mOhms
- 开启时间（最大值）
400 us
- 关闭时间（最大值）
20 us
- 工作电源电压
3.2 V to 6.5 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-23-5
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
HSOP |
5623 |
只做原装正品现货!或订货假一赔十! |
|||
ST/意法 |
21+ |
SOP-10 |
5000 |
原装现货/假一赔十/支持第三方检验 |
|||
ST |
22+ |
POWRERSOP-10 |
7500 |
绝对原装自家现货!真实库存!欢迎来电! |
|||
22+ |
NA |
3000 |
加我QQ或微信咨询更多详细信息, |
||||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
23+ |
PowerSO |
9960 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
ST |
23+ |
SOP-10 |
7800 |
全新原装正品,现货销售 |
|||
ST |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
ST |
原厂原封 |
396379 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
意法半导体 |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
VNV14N04芯片相关品牌
VNV14N04规格书下载地址
VNV14N04参数引脚图相关
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VNV14N04数据表相关新闻
VNS3NV04DPTR-E
VNS3NV04DPTR-E
2023-5-15VNS3NV04DPTR-E
进口代理
2023-1-7VNV35N07TR-E
全新原装现货支持第三方机构验证
2022-6-22VNS1NV04DPTR-E产品种类:门驱动器
VNS1NV04DPTR-E
2021-9-17VO2223A
?VO2223A,当天发货0755-82732291全新原装现货或门市自取.
2020-7-28VO1400AEFTR?原装现货供应
VO1400AEFTR?
2019-12-26
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