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VNV14N04

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14N04, VNK14N04FM and VNV14N04 are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip

STMICROELECTRONICS

意法半导体

VNV14N04

OMNIFET fully autoprotected Power MOSFET

Description The VNB14N04, VNK14N04FM and VNV14N04 are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip

STMICROELECTRONICS

意法半导体

VNV14N04

封装/外壳:PowerSO-10 裸露底部焊盘 包装:管件 描述:IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

VNV14N04

MOSFET POWER AUTOPROT POWERSO10

STMICROELECTRONICS

意法半导体

IC PWR MOSFET M0 42V 14A PWRSO10

STMICROELECTRONICS

意法半导体

封装/外壳:PowerSO-10 裸露底部焊盘 包装:管件 描述:IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14N04, VNK14N04FM and VNV14N04 are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip

STMICROELECTRONICS

意法半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14N04, VNK14N04FM and VNV14N04 are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip

STMICROELECTRONICS

意法半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNP14N04 is a monolithic device made using STMicroelectronics VIPower Technology, Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh envi

STMICROELECTRONICS

意法半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14N04, VNK14N04FM and VNV14N04 are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip

STMICROELECTRONICS

意法半导体

VNV14N04产品属性

  • 类型

    描述

  • 输出数:

    1

  • 比率 - 输入:

    输出

  • 输出配置:

    低端

  • 输出类型:

    N 通道

  • 接口:

    开/关

  • 电压 - 负载:

    35V(最大)

  • 电压 - 电源(Vcc/Vdd):

    不需要

  • 电流 - 输出(最大值):

    10A

  • 导通电阻(典型值):

    70 毫欧(最大)

  • 输入类型:

    非反相

  • 故障保护:

    限流(固定),超温,过压

  • 封装/外壳:

    PowerSO-10 裸露底部焊盘

  • 供应商器件封装:

    10-PowerSO

更新时间:2026-7-31 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STMicroelectronics
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
STMicroelectronics
25+
N/A
18746
样件支持,可原厂排单订货!
ST
20+
na
65790
原装优势主营型号-可开原型号增税票
ST/意法
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
ST
25+
原厂封装
13528
振宏微原装正品,假一罚百
ST/意法半导体
25+
PowerSO-10
12700
买原装认准中赛美
ST
26+
ST-2018
60000
只有原装 可配单
ST
25+
ST-2018
20000
原装,请咨询
ST
22+
10PowerSO
9000
原厂渠道,现货配单
ST/意法半导体
21+
PowerSO-10
8860
只做原装,质量保证

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