位置：首页 > IC中文资料第89页 > VNP14N04
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VNP14N04 | ?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNP14N04 is a monolithic device made using STMicroelectronics VIPower Technology, Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh envi | STMICROELECTRONICS 意法半导体 |   | |
VNP14N04 | 封装/外壳：TO-220-3 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 TO220AB 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
VNP14N04 | ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET | STMICROELECTRONICS 意法半导体 | | |
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB14N04, VNK14N04FM and VNV14N04 are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：ISOWATT-220-3 包装：管件 描述：IC PWR DRVR N-CH 1:1 ISOWATT220 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB14N04, VNK14N04FM and VNV14N04 are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET fully autoprotected Power MOSFET Description The VNB14N04, VNK14N04FM and VNV14N04 are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB14N04, VNK14N04FM and VNV14N04 are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET fully autoprotected Power MOSFET Description The VNB14N04, VNK14N04FM and VNV14N04 are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip | STMICROELECTRONICS 意法半导体 | |
VNP14N04产品属性
- 类型
描述
- 型号
VNP14N04
- 功能描述
MOSFET N-Ch 42V 14A OmniFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
16449 |
原厂直销,现货供应,账期支持! |
|||
ST |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ST |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
STM |
24+ |
SOP-10 |
10000 |
||||
ST |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
STMicroelectronics |
24+ |
TO-220AB |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST/意法 |
17+ |
TO220ISOFULLPACK |
31518 |
原装正品 可含税交易 |
|||
ST/意法 |
24+ |
TO-220AB |
60000 |
全新原装现货 |
|||
ST/意法 |
23+ |
TO220AB |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
VNP14N04规格书下载地址
VNP14N04参数引脚图相关
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VNP14N04数据表相关新闻
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2012-11-11
DdatasheetPDF页码索引
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