for car body applications

Description The L5958 includes 6 linear voltage regulators and a 2 A power switch, working down to 4.5 V battery level. All the voltage regulators can be switched off through the three enable pins. Features ■ L5958 six outputs: – 8.5 V @ 200 mA – 5.0 V @ 300 mA – 3.3 V @ 250 mA

Quad channel high-side driver

Features • General – 16 bit ST-SPI for full and diagnostic – Programmable BULB/LED mode – Integrated PWM and phase shift generation unit – 160 Hz internal PWM fallback frequency – Advanced limp home functionalities for robust fail-safe system – Very low standby current – Optimized electr

Quad channel high-side driver

Features • General – 16 bit ST-SPI for full and diagnostic – Programmable BULB/LED mode – Integrated PWM and phase shift generation unit – 160 Hz internal PWM fallback frequency – Advanced limp home functionalities for robust fail-safe system – Very low standby current – Optimized electr

四通道高侧驱动器

马达/运动/点火控制器和驱动器 Quad Ch High-Side 41V 35mOhm 25A

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D