VND7N04价格
参考价格：￥5.7829
型号：VND7N0413TR 品牌：STMicroelectronics 备注：这里有VND7N04多少钱，2026年最近7天走势，今日出价，今日竞价，VND7N04批发/采购报价，VND7N04行情走势销售排行榜，VND7N04报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VND7N04 | ?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET Description The VND7N04, VND7N04-1 and VNK7N04FM are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip | STMICROELECTRONICS 意法半导体 |   | |
VND7N04 | OMNIFET: Fully autoprotected power MOSFET Features n Linear current limitation n Thermal shut down n Short circuit protection n Integrated clamp n Low current drawn from input pin n Diagnostic feedback through input pin n ESD protection n Direct access to the gate of the power MOSFET (analog driving) n Compatible with standard p | STMICROELECTRONICS 意法半导体 | | |
VND7N04 | Fully autoprotected power MOSFET Description The VND7N04, VND7N04-1 and VNK7N04FM are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip | STMICROELECTRONICS 意法半导体 | | |
VND7N04 | OMNIFET :FULLY AUTOPROTECTED POWER MOSFET • ESD PROTECTION\n• DIAGNOSTIC FEEDBACK THROUGH INPUT PIN\n• COMPATIBLE WITH STANDARD POWER MOSFET\n• LINEAR CURRENT LIMITATION\n• SHORT CIRCUIT PROTECTION• THERMAL SHUT DOWN\n• LOW CURRENT DRAWN FROM INPUT PIN\n• DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)\n• INTEGRATED CLAMP; | STMICROELECTRONICS 意法半导体 | | |
VND7N04 | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
VND7N04 | OMNIFETFully autoprotected power MOSFET 文件：511.85 Kbytes Page：17 Pages | STMICROELECTRONICS 意法半导体 | | |
OMNIFET: Fully autoprotected power MOSFET Features n Linear current limitation n Thermal shut down n Short circuit protection n Integrated clamp n Low current drawn from input pin n Diagnostic feedback through input pin n ESD protection n Direct access to the gate of the power MOSFET (analog driving) n Compatible with standard p | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET Description The VND7N04, VND7N04-1 and VNK7N04FM are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip | STMICROELECTRONICS 意法半导体 | | ||
Fully autoprotected power MOSFET Description The VND7N04, VND7N04-1 and VNK7N04FM are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: Fully autoprotected power MOSFET Features n Linear current limitation n Thermal shut down n Short circuit protection n Integrated clamp n Low current drawn from input pin n Diagnostic feedback through input pin n ESD protection n Direct access to the gate of the power MOSFET (analog driving) n Compatible with standard p | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: Fully autoprotected power MOSFET Features n Linear current limitation n Thermal shut down n Short circuit protection n Integrated clamp n Low current drawn from input pin n Diagnostic feedback through input pin n ESD protection n Direct access to the gate of the power MOSFET (analog driving) n Compatible with standard p | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: Fully autoprotected power MOSFET Features n Linear current limitation n Thermal shut down n Short circuit protection n Integrated clamp n Low current drawn from input pin n Diagnostic feedback through input pin n ESD protection n Direct access to the gate of the power MOSFET (analog driving) n Compatible with standard p | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: Fully autoprotected power MOSFET Features n Linear current limitation n Thermal shut down n Short circuit protection n Integrated clamp n Low current drawn from input pin n Diagnostic feedback through input pin n ESD protection n Direct access to the gate of the power MOSFET (analog driving) n Compatible with standard p | STMICROELECTRONICS 意法半导体 | | ||
Fully autoprotected power MOSFET Description The VND7N04, VND7N04-1 and VNK7N04FM are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: Fully autoprotected power MOSFET Features n Linear current limitation n Thermal shut down n Short circuit protection n Integrated clamp n Low current drawn from input pin n Diagnostic feedback through input pin n ESD protection n Direct access to the gate of the power MOSFET (analog driving) n Compatible with standard p | STMICROELECTRONICS 意法半导体 | | ||
OMNIFETFully autoprotected power MOSFET 文件：511.85 Kbytes Page：17 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFETFully autoprotected power MOSFET 文件：511.85 Kbytes Page：17 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET Description The VND7N04, VND7N04-1 and VNK7N04FM are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET Description The VND7N04, VND7N04-1 and VNK7N04FM are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET 文件：133.94 Kbytes Page：11 Pages | STMICROELECTRONICS 意法半导体 | |
VND7N04产品属性
- 类型
描述
- Technology：
M0-2
- RDS(on)_typ(mΩ)：
140
- General Description：
OMNIFET
- Marketing Status：
NRND
- Package：
DPAK
- RoHS Compliance Grade：
Ecopack1
- Clamp Voltage_typ(V)：
42
- Drain Current Limit_typ(A)：
7
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMICROELECTRONICS |
25+ |
N/A |
18746 |
样件支持,可原厂排单订货! |
|||
STMICROELECTRONICS |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST |
24+ |
TO252 |
8000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ST |
22+ |
DPak |
9000 |
原厂渠道,现货配单 |
|||
STM |
24+/25+ |
DPAK(TO-252) |
25000 |
原装正品现货库存价优 |
|||
ST |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
STM |
2450+ |
TO-252 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
STM |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
ST |
22+ |
SOT-252 |
20000 |
||||
ST/意法半导体 |
26+ |
TO-252-3 |
10000 |
十年沉淀唯有原装 |
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VND7N04规格书下载地址
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DdatasheetPDF页码索引
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