DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER BRIDGE CONFIGURATION

Description The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge configuration. The device integrates two 30 mW Power MOSFET in high-side configuration, and provides gate drive for two external Power MOSFET used as l

Dual high-side switch with dual Power MOSFET gate driver(bridge configuration)

Description The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge configuration. The device integrates two 30 mW Power MOSFET in high-side configuration, and provides gate drive for two external Power MOSFET used as l

封装/外壳：PowerSO-10 裸露底部焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWITCH 1:1 PWRSO10 集成电路（IC） 配电开关，负载驱动器

DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER BRIDGE CONFIGURATION

Dual high-side switch with dual Power MOSFET gate driver(bridge configuration)

Description The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge configuration. The device integrates two 30 mW Power MOSFET in high-side configuration, and provides gate drive for two external Power MOSFET used as l

Dual high-side switch with dual Power MOSFET gate driver(bridge configuration)

Description The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge configuration. The device integrates two 30 mW Power MOSFET in high-side configuration, and provides gate drive for two external Power MOSFET used as l

封装/外壳：PowerSO-10 裸露底部焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWITCH 1:1 PWRSO10 集成电路（IC） 配电开关，负载驱动器

FAST RECOVERY DIODE

FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY Repetitive voltage up to 4500 V Mean forward current 1315 A Surge current 15 kA

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Multi TOPLED

Multi TOPLED® Features ●P-LCC-4 package ●color of package: white ●for use as optical indicator ●for backlighting, optical coupling into light pipes and lenses ●both chips can be controlled separately ●high signal efficiency possible by color change of the LED ●with approp

Multi TOPLED

Multi TOPLED® Features ●P-LCC-4 package ●color of package: white ●for use as optical indicator ●for backlighting, optical coupling into light pipes and lenses ●both chips can be controlled separately ●high signal efficiency possible by color change of the LED ●with approp