位置:VND670SP13TR > VND670SP13TR详情

VND670SP13TR中文资料

厂家型号

VND670SP13TR

文件大小

302.01Kbytes

页面数量

20

功能描述

Dual high-side switch with dual Power MOSFET gate driver(bridge configuration)

功率驱动器IC Dual Hi-Side Switch

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

VND670SP13TR数据手册规格书PDF详情

Description

The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge configuration. The device integrates two 30 mW Power MOSFET in high-side configuration, and provides gate drive for two external Power MOSFET used as low side switches. INA and INB allow to select clockwise or counter clockwise drive or brake; DIAGA/ENA, DIAGB/ENB allow to disable one half bridge and feedback diagnostic. Built-in thermal shutdown, combined with a current limiter, protects the chip in overtemperature and short circuit conditions. Short to battery protects the external connected low-side Power MOSFET.

Features

■ 5V logic level compatible inputs

■ Gate drive for two external power MOSFET

■ Undervoltage and overvoltage shutdown

■ Overvoltage clamp

■ Thermal shutdown

■ Cross-conduction protection

■ Current limitation

■ Very low standby power consumption

■ PWM operation up to 10 KHz

■ Protection against loss of ground and loss of VCC

■ Reverse battery protection

VND670SP13TR产品属性

  • 类型

    描述

  • 型号

    VND670SP13TR

  • 功能描述

    功率驱动器IC Dual Hi-Side Switch

  • RoHS

  • 制造商

    Micrel

  • 产品

    MOSFET Gate Drivers

  • 类型

    Low Cost High or Low Side MOSFET Driver

  • 电源电压-最大

    30 V

  • 电源电压-最小

    2.75 V

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-8

  • 封装

    Tube

更新时间:2025-10-11 15:00:00
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