位置：首页 > IC中文资料 > VND10N06-1MOS
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ISO HIGH SIDE SMART POWER SOLID STATE RELAY Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h | STMICROELECTRONICS 意法半导体 |   | ||
fully autoprotected Power MOSFET 文件：510.05 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET fully autoprotected Power MOSFET 文件：595.92 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET fully autoprotected Power MOSFET 文件：595.92 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET fully autoprotected Power MOSFET 文件：595.92 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
IPAK |
5115 |
百分百原装正品,可原型号开票 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
23+ |
TO-251 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST |
18+ |
TO-251 |
5000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
24+ |
TO-251 |
3880 |
||||
ST |
23+ |
TO-251 |
16900 |
正规渠道,只有原装! |
|||
ST/意法 |
2022+ |
TO-251 |
5000 |
原厂代理 终端免费提供样品 |
|||
ST |
25+ |
TO-251 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST(意法半导体) |
24+ |
IPAK |
959 |
特价优势库存质量保证稳定供货 |
|||
ST/意法 |
24+ |
TO-251 |
5000 |
只做原厂渠道 可追溯货源 |
VND10N06-1MOS芯片相关品牌
VND10N06-1MOS规格书下载地址
VND10N06-1MOS参数引脚图相关
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VND10N06-1MOS数据表相关新闻
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进口代理
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