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VND10价格
参考价格：￥16.3282
型号：VND10BSP-E 品牌：ST Microelectronics 备注：这里有VND10多少钱，2025年最近7天走势，今日出价，今日竞价，VND10批发/采购报价，VND10行情走势销售排行榜，VND10报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VND10 | ISO HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr | STMICROELECTRONICS 意法半导体 |   | |
VND10 | DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr | STMICROELECTRONICS 意法半导体 | | |
VND10 | DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | STMICROELECTRONICS 意法半导体 | | |
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr | STMICROELECTRONICS 意法半导体 | | ||
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr | STMICROELECTRONICS 意法半导体 | | ||
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr | STMICROELECTRONICS 意法半导体 | | ||
ISO HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr | STMICROELECTRONICS 意法半导体 | | ||
ISO HIGH SIDE SMART POWER SOLID STATE RELAY Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h | STMICROELECTRONICS 意法半导体 | | ||
ISO HIGH SIDE SMART POWER SOLID STATE RELAY Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h | STMICROELECTRONICS 意法半导体 | | ||
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY 文件：213.38 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | | ||
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY 文件：222.98 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | | ||
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：Pentawatt-5（水平，弯曲和错列引线） 包装：管件 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：Pentawatt-5（直引线，交错配接深度） 包装：管件 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY 文件：213.38 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | | ||
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY 文件：222.98 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | | ||
ISO HIGH SIDE SMART POWER SOLID STATE RELAY 文件：201.75 Kbytes Page：11 Pages | STMICROELECTRONICS 意法半导体 | | ||
fully autoprotected Power MOSFET 文件：510.05 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET fully autoprotected Power MOSFET 文件：595.92 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET fully autoprotected Power MOSFET 文件：595.92 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET：全自动保护功率MOSFET | STMICROELECTRONICS 意法半导体 | | ||
fully autoprotected Power MOSFET 文件：510.05 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET fully autoprotected Power MOSFET 文件：595.92 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET fully autoprotected Power MOSFET 文件：595.92 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET fully autoprotected Power MOSFET 文件：595.92 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET fully autoprotected Power MOSFET 文件：595.92 Kbytes Page：25 Pages | STMICROELECTRONICS 意法半导体 | |
VND10产品属性
- 类型
描述
- 型号
VND10
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
TO-220-7 |
990000 |
明嘉莱只做原装正品现货 |
|||
ST |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
ST |
25+ |
SOP10 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
25+23+ |
TO220-7 |
23505 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
25+ |
TO-252 |
32360 |
ST/意法全新特价VND10N0613TR即刻询购立享优惠#长期有货 |
|||
ST/意法 |
23+ |
SOP10 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST |
23+ |
SOP10 |
3600 |
绝对全新原装!现货!特价!请放心订购! |
|||
ST(意法) |
25+ |
5000 |
只做原装 假一罚百 可开票 可售样 |
||||
ST(意法半导体) |
24+ |
IPAK |
959 |
特价优势库存质量保证稳定供货 |
|||
ST/意法 |
24+ |
TO220 |
22055 |
郑重承诺只做原装进口现货 |
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VND10数据表相关新闻
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