ISO HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h

OMNIFET：全自动保护功率MOSFET

The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments • ESD protection \n• Logic level input threshold \n• High noise immunity \n• Linear current limitation \n• Short circuit protection \n• Thermal shutdown \n• Low current drawn from input pin \n• Schmitt trigger on input \n• Integrated clamp;

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

文件：213.38 Kbytes Page：13 Pages

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

文件：222.98 Kbytes Page：13 Pages

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

封装/外壳：Pentawatt-5（水平，弯曲和错列引线） 包装：管件 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路（IC） 配电开关，负载驱动器

封装/外壳：Pentawatt-5（直引线，交错配接深度） 包装：管件 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路（IC） 配电开关，负载驱动器

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

文件：213.38 Kbytes Page：13 Pages

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

文件：222.98 Kbytes Page：13 Pages

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件：201.75 Kbytes Page：11 Pages

fully autoprotected Power MOSFET

文件：510.05 Kbytes Page：25 Pages

OMNIFET fully autoprotected Power MOSFET

文件：595.92 Kbytes Page：25 Pages

OMNIFET fully autoprotected Power MOSFET

文件：595.92 Kbytes Page：25 Pages

OMNIFET fully autoprotected Power MOSFET

文件：595.92 Kbytes Page：25 Pages

OMNIFET fully autoprotected Power MOSFET

文件：595.92 Kbytes Page：25 Pages

fully autoprotected Power MOSFET

文件：510.05 Kbytes Page：25 Pages

OMNIFET fully autoprotected Power MOSFET

文件：595.92 Kbytes Page：25 Pages

OMNIFET fully autoprotected Power MOSFET

文件：595.92 Kbytes Page：25 Pages