VND10价格

参考价格:¥16.3282

型号:VND10BSP-E 品牌:ST Microelectronics 备注:这里有VND10多少钱,2025年最近7天走势,今日出价,今日竞价,VND10批发/采购报价,VND10行情走势销售排行榜,VND10报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VND10

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr

STMICROELECTRONICS

意法半导体

VND10

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr

STMICROELECTRONICS

意法半导体

VND10

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

STMICROELECTRONICS

意法半导体

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr

STMICROELECTRONICS

意法半导体

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr

STMICROELECTRONICS

意法半导体

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr

STMICROELECTRONICS

意法半导体

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VND10BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip fr

STMICROELECTRONICS

意法半导体

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h

STMICROELECTRONICS

意法半导体

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h

STMICROELECTRONICS

意法半导体

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

文件:213.38 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

文件:222.98 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

STMICROELECTRONICS

意法半导体

封装/外壳:Pentawatt-5(水平,弯曲和错列引线) 包装:管件 描述:IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

封装/外壳:Pentawatt-5(直引线,交错配接深度) 包装:管件 描述:IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

文件:213.38 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

文件:222.98 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件:201.75 Kbytes Page:11 Pages

STMICROELECTRONICS

意法半导体

fully autoprotected Power MOSFET

文件:510.05 Kbytes Page:25 Pages

STMICROELECTRONICS

意法半导体

OMNIFET fully autoprotected Power MOSFET

文件:595.92 Kbytes Page:25 Pages

STMICROELECTRONICS

意法半导体

OMNIFET fully autoprotected Power MOSFET

文件:595.92 Kbytes Page:25 Pages

STMICROELECTRONICS

意法半导体

OMNIFET:全自动保护功率MOSFET

STMICROELECTRONICS

意法半导体

fully autoprotected Power MOSFET

文件:510.05 Kbytes Page:25 Pages

STMICROELECTRONICS

意法半导体

OMNIFET fully autoprotected Power MOSFET

文件:595.92 Kbytes Page:25 Pages

STMICROELECTRONICS

意法半导体

OMNIFET fully autoprotected Power MOSFET

文件:595.92 Kbytes Page:25 Pages

STMICROELECTRONICS

意法半导体

OMNIFET fully autoprotected Power MOSFET

文件:595.92 Kbytes Page:25 Pages

STMICROELECTRONICS

意法半导体

OMNIFET fully autoprotected Power MOSFET

文件:595.92 Kbytes Page:25 Pages

STMICROELECTRONICS

意法半导体

VND10产品属性

  • 类型

    描述

  • 型号

    VND10

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

更新时间:2025-10-17 9:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法半导体
24+
PowerSO-10 裸露底部焊盘
6000
全新原装深圳仓库现货有单必成
ST
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
ST(意法)
24+
DPAK
5590
只做原装现货假一罚十!价格最低!只卖原装现货
ST/意法
24+
TO-252
9600
原装现货,优势供应,支持实单!
STM
14+
TO252
2842
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
STMicroelectronics
2023+
D-Pak
1475
安罗世纪电子只做原装正品货
STM
2025+
TO220
3645
全新原厂原装产品、公司现货销售
ST/意法半导体
24+
DPAK-2
10000
十年沉淀唯有原装
ST
24+
SOP10
6868
原装现货,可开13%税票

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