位置：首页 > IC中文资料第88页 > VND05B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VND05B | DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND05B, VND05B (011Y), VND05B (012Y) is a monolithic device designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. This device has two channels, and a common diagnostic. Built-in thermal shutdown pr | STMICROELECTRONICS 意法半导体 |   | |
VND05B | DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND05B, VND05B (011Y), VND05B (012Y) is a monolithic device designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. This device has two channels, and a common diagnostic. Built-in thermal shutdown pr | STMICROELECTRONICS 意法半导体 | | |
VND05B | 封装/外壳：Heptawatt-7（垂直，弯曲和错列引线） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRVR N-CH 1:1 HEPTAWATT-7 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
VND05B | DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | STMICROELECTRONICS 意法半导体 | | |
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND05B, VND05B (011Y), VND05B (012Y) is a monolithic device designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. This device has two channels, and a common diagnostic. Built-in thermal shutdown pr | STMICROELECTRONICS 意法半导体 | | ||
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND05B, VND05B (011Y), VND05B (012Y) is a monolithic device designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. This device has two channels, and a common diagnostic. Built-in thermal shutdown pr | STMICROELECTRONICS 意法半导体 | | ||
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND05B, VND05B (011Y), VND05B (012Y) is a monolithic device designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. This device has two channels, and a common diagnostic. Built-in thermal shutdown pr | STMICROELECTRONICS 意法半导体 | | ||
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND05B, VND05B (011Y), VND05B (012Y) is a monolithic device designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. This device has two channels, and a common diagnostic. Built-in thermal shutdown pr | STMICROELECTRONICS 意法半导体 | | ||
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VND05B, VND05B (011Y), VND05B (012Y) is a monolithic device designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. This device has two channels, and a common diagnostic. Built-in thermal shutdown pr | STMICROELECTRONICS 意法半导体 | | ||
ISO HIGH SIDE SMART POWER SOLID STATE RELAY Description The VND05BSP is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shutdown protects the chip from over temperature | STMICROELECTRONICS 意法半导体 | | ||
Iso high side smart power solid state relay Description The VND05BSP is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shutdown protects the chip from over temperature | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：Heptawatt-7（直引线，交错配接深度） 包装：管件 描述：IC PWR DRVR N-CH 1:1 HEPTAWATT-7 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
Iso high side smart power solid state relay 文件：268.62 Kbytes Page：16 Pages | STMICROELECTRONICS 意法半导体 | |
VND05B产品属性
- 类型
描述
- 型号
VND05B
- 功能描述
固态继电器-PCB安装 40V 1.6A Hi-Side SSR
- RoHS
否
- 制造商
Omron Electronics
- 负载电压额定值
40 V
- 负载电流额定值
120 mA
- 触点形式
1 Form A(SPST-NO)
- 输出设备
MOSFET
- 封装/箱体
USOP-4
- 安装风格
SMD/SMT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
ST |
24+ |
HSOP10 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ST/意法 |
25+ |
HSOP10 |
54658 |
百分百原装现货 实单必成 |
|||
ST/意法 |
22+ |
HSOP10 |
100000 |
代理渠道/只做原装/可含税 |
|||
ST |
10+ |
1 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
ST/意法半导体 |
23+ |
PowerSO-10 裸露底部焊盘 |
12700 |
买原装认准中赛美 |
|||
ST/意法 |
25+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
23+ |
HEPTAWATT MONO FRAME |
16900 |
正规渠道,只有原装! |
|||
ST/意法半导体 |
24+ |
PowerSO-10 裸露底部焊盘 |
30000 |
原装正品公司现货,假一赔十! |
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VND05B规格书下载地址
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VND05B数据表相关新闻
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