HIGH SIDE DRIVER

DESCRIPTION The VN920DSP is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table

HIGH SIDE DRIVER

文件：177.52 Kbytes Page：19 Pages

HIGH SIDE DRIVER

文件：284.43 Kbytes Page：19 Pages

for car body applications

Description The L5958 includes 6 linear voltage regulators and a 2 A power switch, working down to 4.5 V battery level. All the voltage regulators can be switched off through the three enable pins. Features ■ L5958 six outputs: – 8.5 V @ 200 mA – 5.0 V @ 300 mA – 3.3 V @ 250 mA

HIGH SIDE DRIVER

DESCRIPTION The VN920DSP is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table

HIGH SIDE DRIVER

DESCRIPTION The VN920DSP is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table

HIGH SIDE DRIVER

文件：177.52 Kbytes Page：19 Pages

HIGH SIDE DRIVER

文件：284.43 Kbytes Page：19 Pages

封装/外壳：PowerSO-10 裸露底部焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成电路（IC） 配电开关，负载驱动器

HIGH SIDE DRIVER

文件：284.43 Kbytes Page：19 Pages

HIGH SIDE DRIVER

文件：177.52 Kbytes Page：19 Pages

IC DRIVER HIGHSIDE 1CH POWERSO10

IC SSR HIGH SIDE SGL MO-3 16SOIC

封装/外壳：PowerSO-10 裸露底部焊盘 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成电路（IC） 配电开关，负载驱动器

SINGLE CHANNEL HIGH SIDE SOLID STATE RELAY

DESCRIPTION The VN920, VN920-B5, VN920SO is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient comp

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171A flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • Internal input matching to achieve high power gain and ea

HIGH VOLTAGE POWER DISSIPATION

HIGH VOLTAGE POWER DISSIPATION

HIGH VOLTAGE POWER DISSIPATION

HIGH VOLTAGE POWER DISSIPATION

HIGH VOLTAGE POWER DISSIPATION

HIGH VOLTAGE POWER DISSIPATION