HIGH SIDE DRIVER

DESCRIPTION The VN920D-B5, VN920DSO are monolithic devices made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibi

HIGH SIDE DRIVER

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HIGH SIDE DRIVER

DESCRIPTION The VN920D-B5, VN920DSO are monolithic devices made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibi

SINGLE CHANNEL HIGH SIDE SOLID STATE RELAY

DESCRIPTION The VN920, VN920-B5, VN920SO is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient comp

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171A flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • Internal input matching to achieve high power gain and ea

HIGH VOLTAGE POWER DISSIPATION

HIGH VOLTAGE POWER DISSIPATION

HIGH VOLTAGE POWER DISSIPATION

HIGH VOLTAGE POWER DISSIPATION

HIGH VOLTAGE POWER DISSIPATION

HIGH VOLTAGE POWER DISSIPATION