HIGH SIDE DRIVER

DESCRIPTION The VN920-E, VN920B5-E, VN920SO-E is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient

High Side Driver

The VN920-E is a monolithic device designed in STMicroelectronics VIPower™ M0-3 technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility able).\nActive current Reverse battery protected\nVery low standby power dissipation\nIn compliance with the 2002/95/ec european directive\nCurrent limitation\nThermal shutdown\nCMOS compatible input\nShorted load protection\nProportional load current sense\nOvervoltage clamp\nProtection against loss of ground and loss of;

Single-channel high side driver

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封装/外壳：Pentawatt-5（垂直，弯曲和错列引线） 包装：管件 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路（IC） 配电开关，负载驱动器

SINGLE CHANNEL HIGH SIDE SOLID STATE RELAY

DESCRIPTION The VN920, VN920-B5, VN920SO is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient comp

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171A flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • Internal input matching to achieve high power gain and ea

HIGH VOLTAGE POWER DISSIPATION

HIGH VOLTAGE POWER DISSIPATION

HIGH VOLTAGE POWER DISSIPATION

HIGH VOLTAGE POWER DISSIPATION

HIGH VOLTAGE POWER DISSIPATION

HIGH VOLTAGE POWER DISSIPATION