HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VN540, VN540SP, VN540(011Y), VN540(012Y) is a monolithic device designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. Active current limitation avoids the system power supply dropping in case of shor

HIGH SIDE SMART POWER SOLID STATE RELAY

HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VN540, VN540SP, VN540(011Y), VN540(012Y) is a monolithic device designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. Active current limitation avoids the system power supply dropping in case of shor

HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VN540, VN540SP, VN540(011Y), VN540(012Y) is a monolithic device designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. Active current limitation avoids the system power supply dropping in case of shor

SINGLE HIGH SIDE SMART POWER SOLID STATE RELAY

Description The VN540-E, VN540SP-E, VN540-12-E are monolithic devices designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. Active current limitation avoids the system power supply dropping in case of shorted load.

SINGLE HIGH SIDE SMART POWER SOLID STATE RELAY

Description The VN540-E, VN540SP-E, VN540-12-E are monolithic devices designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. Active current limitation avoids the system power supply dropping in case of shorted load.

SINGLE HIGH SIDE SMART POWER SOLID STATE RELAY

The VN540-E and VN540SP-E are monolithic devices designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. Active current limitation avoids the system power supply dropping in case of shorted load. Built-in thermal shutdow • 10 V to 36 V supply voltage range\n• Up to IOUT = 2.8 A operating current\n• RDS(on): 50 m?\n• Vdemag = VCC - 55 V\n• Digital input clamped at 32 V• Protection against:\n• Loss of ground\n• Shorted load and overtemperature\n• Built-in current limiter\n• Undervoltage shutdown\n• Open drain diagnost;

HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VN540, VN540SP, VN540(011Y), VN540(012Y) is a monolithic device designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. Active current limitation avoids the system power supply dropping in case of shor

SINGLE HIGH SIDE SMART POWER SOLID STATE RELAY

Description The VN540-E, VN540SP-E, VN540-12-E are monolithic devices designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. Active current limitation avoids the system power supply dropping in case of shorted load.

单通道高侧智能功率固态继电器

• 10 V to 36 V supply voltage range \n• Up to IOUT = 2.8 A operating current \n• RDS(on) = 50 mW \n• Vdemag = VCC - 55 V \n• Digital input clamped at 32 V \n• Protection against: \n •Loss of ground \n •Shorted load and overtemperature \n• Built-in current limiter \n• Undervoltage shutdown \n• Open d;

SINGLE HIGH SIDE SMART POWER SOLID STATE RELAY

Description The VN540-E, VN540SP-E, VN540-12-E are monolithic devices designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. Active current limitation avoids the system power supply dropping in case of shorted load.

封装/外壳：Pentawatt-5（垂直，弯曲和错列引线） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER 1:1 5PENTAWATT 集成电路（IC） 配电开关，负载驱动器

封装/外壳：PowerSO-10 裸露底部焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER 1:1 PWRSO10 集成电路（IC） 配电开关，负载驱动器

丝印代码：-MG；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

NPN 9 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. FEATURES • High power gain • Low noise figure • High transition frequency

Octal buffer/line driver; 3-state; inverting

GENERAL DESCRIPTION The 74HC/HCT540 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. FEATURES • Inverting outputs • Output capability: bus driver • ICC category: MSI

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca