N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedanc

N-Channel Enhancement-Mode Vertical DMOS FETs

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedanc

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedanc

Enhancement-Mode MOSFET Transistors

Customer Specification

Construction Diameters (In) 1) Component 1 15 X 1 COND a) Conductor 22 (7/30) AWG TC 0.030 b) Insulation 0.016 Wall, Nom. PVC 0.062 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 6 BLUE 11 BROWN 2 RED 7 VILOET 12 RED 3 ORANGE 8 SLATE 13 ORANGE 4 YELLOW 9 WHITE 14 YELLOW 5 GREEN 1

RATIOMETRIC, LINEAR HALL-EFFECT SENSORS FOR HIGH-TEMPERATURE OPERATION

RATIOMETRIC, LINEAR HALL-EFFECT SENSORS FOR HIGH-TEMPERATURE OPERATION The A3515– and A3516– are sensitive, temperature-stable linear Hall effect sensors with greatly improved offset characteristics. Ratiometric, linear Hall-effect sensors provide a voltage output that is proportional to the

RAST-2.5-Steckverbinder, Raster 2,5/5,0 mm

RAST 2.5 connector for direct mating, insulation displacement technology (IDT), with locking on printed circuit board by means of locking hooks, alternatively with or without keying rib and closed sides

RAST 2.5 connectors, pitch 2.5/5.0 mm

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Customer Specification

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