15 V low VCEsat PNP double transistor

DESCRIPTION PNP low VCEsat double transistor in a SOT666 plastic package. NPN complement: PBSS2515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Low collector-emitter saturation voltage •

15 V low VCE(sat) PNP double transistor

丝印代码：35；15 V low VCEsat PNP double transistor

1. General description PNP low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2515VS 2. Features and benefits • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Self alignment du

15 V low VCEsat PNP double transistor

PNP low VCEsat double transistor in a SOT666 plastic package.\n NPN complement: PBSS2515VS. • 300 mW total power dissipation\n• Very small 1.6 x 1.2 mm ultra thin package\n• Self alignment during soldering due to straight leads\n• Low collector-emitter saturation voltage\n• High current capability\n• Improved thermal behaviour due to flat leads\n• Replaces two SC75/SC89 packaged low VCEsat;

4-Bit Single-Chip Microcomputer(For Data Bank Use)

DESCRIPTION The SM3515 is a CMOS 4-bit single-chip microcomputer for databank incorporating data memory RAM, LCD driver, key input circuits and buzzer output circuit. By connecting an external crystal, a 1Hz timer interrupt is made possible for easier clock function. FEATURES • ROM capa

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

900 MHz analog cordless telephone IC

文件：180.01 Kbytes Page：44 Pages

900 MHz analog cordless telephone IC

文件：180.01 Kbytes Page：44 Pages