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VN2460N3价格
参考价格：￥5.8344
型号：VN2460N3-G 品牌：Microchip Technology 备注：这里有VN2460N3多少钱，2025年最近7天走势，今日出价，今日竞价，VN2460N3批发/采购报价，VN2460N3行情走势销售排行榜，VN2460N3报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VN2460N3 | N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high | SUTEX |   | |
VN2460N3 | N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | |
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | |
VN2460N3产品属性
- 类型
描述
- 型号
VN2460N3
- 功能描述
MOSFET 600V 20Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SUPERTE |
24+ |
TO-92 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SUPERTEX |
23+ |
TO-92 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MICROCHIP(美国微芯) |
2447 |
TO-92-3 |
31500 |
2000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
SUPERTEX |
23+ |
TO-92 |
50000 |
全新原装正品现货,支持订货 |
|||
Microchip |
22+ |
TO2263 TO923 (TO226AA) |
9000 |
原厂渠道,现货配单 |
|||
Supertex |
22+ |
TO-92 |
25000 |
只做原装进口现货,专注配单 |
|||
MICROCHIP(美国微芯) |
2021+ |
TO-92-3 |
499 |
||||
MICROCHIP(美国微芯) |
24+ |
TO-92 |
9203 |
支持大陆交货,美金交易。原装现货库存。 |
|||
SUPERTEX |
24+ |
TO-92 |
1600 |
VN2460N3规格书下载地址
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