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VN2460价格
参考价格：￥5.8344
型号：VN2460N3-G 品牌：Microchip Technology 备注：这里有VN2460多少钱，2026年最近7天走势，今日出价，今日竞价，VN2460批发/采购报价，VN2460行情走势销售排行榜，VN2460报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VN2460 | N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high | SUTEX |   | |
VN2460 | N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | |
VN2460 | N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | |
VN2460 | MOSFET, N-Channel Enhancement-Mode, 600V, 20 Ohm | MICROCHIP 微芯科技 | | |
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs | MICROCHIP 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
MOSFET 600V 20Ohm | MICROCHIP 微芯科技 | | ||
FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN 文件：1.35418 Mbytes Page：54 Pages | TI 德州仪器 | | ||
FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN 文件：1.35418 Mbytes Page：54 Pages | TI 德州仪器 | | ||
FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN 文件：1.35418 Mbytes Page：54 Pages | TI 德州仪器 | |
VN2460产品属性
- 类型
描述
- 型号
VN2460
- 功能描述
MOSFET 600V 20Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microchip Technology / Atmel |
25+ |
TO-92-3 |
6843 |
样件支持,可原厂排单订货! |
|||
Microchip Technology / Atmel |
25+ |
TO-92-3 |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
SUPERTE |
24+ |
SOT89 |
8000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SUPERTEX |
24+ |
SOT89 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SUPERTE |
25+ |
SOT89 |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
SUPERTE |
25+ |
SOT89 |
880000 |
明嘉莱只做原装正品现货 |
|||
MICROCHIP/美国微芯 |
21+ |
SOT-89(SOT-89-3) |
10000 |
只做原装,质量保证 |
|||
MICROCHIP |
25+ |
SOT89 |
16000 |
全新原装现货,假一赔十 |
|||
Microchip |
22+ |
TO243AA |
9000 |
原厂渠道,现货配单 |
|||
MICROCHIP/微芯 |
2406+ |
71260 |
诚信经营!进口原装!量大价优! |
VN2460规格书下载地址
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