VN2460价格
参考价格:¥5.8344
型号:VN2460N3-G 品牌:Microchip Technology 备注:这里有VN2460多少钱,2026年最近7天走势,今日出价,今日竞价,VN2460批发/采购报价,VN2460行情走势销售排行榜,VN2460报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VN2460 | N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high | SUTEX | ||
VN2460 | N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | ||
VN2460 | MOSFET, N-Channel Enhancement-Mode, 600V, 20 Ohm This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coeffici Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain; | MICROCHIP 微芯科技 | ||
VN2460 | N-Channel Enhancement-Mode Vertical DMOS FET 文件:727.55 Kbytes Page:6 Pages | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:727.55 Kbytes Page:6 Pages | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FETs | MICROCHIP 微芯科技 | |||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:727.55 Kbytes Page:6 Pages | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:727.55 Kbytes Page:6 Pages | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:727.55 Kbytes Page:6 Pages | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:727.55 Kbytes Page:6 Pages | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:727.55 Kbytes Page:6 Pages | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:727.55 Kbytes Page:6 Pages | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET 文件:727.55 Kbytes Page:6 Pages | SUTEX | |||
MOSFET 600V 20Ohm | MICROCHIP 微芯科技 | |||
FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN 文件:1.35418 Mbytes Page:54 Pages | TI 德州仪器 | |||
FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN 文件:1.35418 Mbytes Page:54 Pages | TI 德州仪器 | |||
FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN 文件:1.35418 Mbytes Page:54 Pages | TI 德州仪器 |
VN2460产品属性
- 类型
描述
- BVdss min (V):
600
- Rds (on) max (Ohms):
20
- CISSmax (pF):
150
- Vgs(th) max (V):
4.0
- Packages:
3\\SOT-893\\TO-92
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SUPERTEX |
25+ |
SOT-89 |
6500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
26+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MICROCHIP |
25+ |
SOT-89 |
20000 |
原装 |
|||
MICROCHIP |
25+ |
SOT-89 |
18000 |
原装优势现货 |
|||
SUPERTEX |
25+ |
SOT89 |
90000 |
全新原装现货 |
|||
SUPERTEX |
2450+ |
SOT89 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
MICROCHIP/微芯 |
25+ |
SOT89 |
32360 |
MICROCHIP/微芯全新特价VN2460N8-G即刻询购立享优惠#长期有货 |
|||
SUPERT |
23+ |
SOT89 |
3000 |
原装正品假一罚百!可开增票! |
|||
MICROCHIP/微芯 |
22+ |
SOT-89-3 |
12245 |
现货,原厂原装假一罚十! |
|||
SUPERTEX |
23+ |
SOT-89 |
50000 |
全新原装正品现货,支持订货 |
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DdatasheetPDF页码索引
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