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位置：首页 > IC中文资料 > VN2460

VN2460价格

参考价格：￥5.8344

型号：VN2460N3-G 品牌：Microchip Technology 备注：这里有VN2460多少钱，2026年最近7天走势，今日出价，今日竞价，VN2460批发/采购报价，VN2460行情走势销售排行榜，VN2460报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VN2460

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

SUTEX

VN2460

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460

MOSFET, N-Channel Enhancement-Mode, 600V, 20 Ohm

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coeffici Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain;

MICROCHIP

微芯科技

VN2460

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

SUTEX

VN2460N3

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P002

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P002-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P003

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P003-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P013

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P013-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P014

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P014-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N8

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

SUTEX

VN2460N8-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N8VN2460N3-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460NW

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

SUTEX

VN2460_13

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3

N-Channel Enhancement-Mode Vertical DMOS FETs

MICROCHIP

微芯科技

VN2460N3-G

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP002

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP003

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP005

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP013

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP014

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N8-G

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N8-G

MOSFET 600V 20Ohm

MICROCHIP

微芯科技

TLV2460AID

FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN

文件：1.35418 Mbytes Page：54 Pages

TI

德州仪器

TLV2460AMJGB

FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN

文件：1.35418 Mbytes Page：54 Pages

TI

德州仪器

TLV2460AQDR

FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN

文件：1.35418 Mbytes Page：54 Pages

TI

德州仪器

VN2460产品属性

  • 类型

    描述

  • BVdss min (V)：

    600

  • Rds (on) max (Ohms)：

    20

  • CISSmax (pF)：

    150

  • Vgs(th) max (V)：

    4.0

  • Packages：

    3\\SOT-893\\TO-92

VN2460供应商更多...

更新时间：2026-5-18 9:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市卓越微芯电子有限公司
VN2460N8
SUPERTEX
25+
SOT-89
6500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
现代芯城（深圳）科技有限公司
VN2460N3-G-P014
26+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
询价
深圳市清腾科技有限公司
VN2460N8-G
MICROCHIP
25+
SOT-89
20000
原装
询价
深圳市众芯源半导体有限公司
VN2460N8-G
MICROCHIP
25+
SOT-89
18000
原装优势现货
询价
深圳市博中泰实业有限公司
VN2460N8
SUPERTEX
25+
SOT89
90000
全新原装现货
询价
深圳市科恒伟业电子有限公司
VN2460N8
SUPERTEX
2450+
SOT89
8850
只做原装正品假一赔十为客户做到零风险!!
询价
中天科工半导体（深圳）有限公司
VN2460N8-G
MICROCHIP/微芯
25+
SOT89
32360
MICROCHIP/微芯全新特价VN2460N8-G即刻询购立享优惠#长期有货
询价
深圳市能创芯电子科技有限公司
VN2460N8
SUPERT
23+
SOT89
3000
原装正品假一罚百!可开增票!
询价
深圳市美思瑞电子科技有限公司
VN2460N8-G
MICROCHIP/微芯
22+
SOT-89-3
12245
现货,原厂原装假一罚十!
询价
深圳市安富世纪电子有限公司
VN2460N8-G
SUPERTEX
23+
SOT-89
50000
全新原装正品现货,支持订货
询价

VN2460芯片相关品牌

VN2460规格书下载地址

VN2460参数引脚图相关

VN2460数据表相关新闻

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