位置：首页 > IC中文资料第1473页 > VN2460
VN2460价格
参考价格：￥5.8344
型号：VN2460N3-G 品牌：Microchip Technology 备注：这里有VN2460多少钱，2025年最近7天走势，今日出价，今日竞价，VN2460批发/采购报价，VN2460行情走势销售排行榜，VN2460报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VN2460 | N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high | SUTEX |   | |
VN2460 | N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | |
VN2460 | N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | |
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：727.55 Kbytes Page：6 Pages | SUTEX | | ||
Economical design, available with PC terminals or wire leads • Economical design, available with PC terminals or wire leads • Batteries securely held in place to assure a positive connection and maintain a low contact resistance • Contact springs self-adjust to variations in battery length • Withstands shock and vibration • Available with solder lugs o | KEYSTONE Keystone Electronics Corp. | | ||
ELECTRONIC IGNITION TIMING FEATURES ■ Improved System Reliability ■ Internal Bypass Mode ■ Constant-Current Drive to Ignition Coil ■ 180 mJ Primary Coil Energy | ALLEGRO | | ||
ELECTRONIC IGNITION TIMING FEATURES ■ Improved System Reliability ■ Internal Bypass Mode ■ Constant-Current Drive to Ignition Coil ■ 180 mJ Primary Coil Energy | ALLEGRO | | ||
Rosemount??2460 System Hub for tank gauging systems 文件：3.43816 Mbytes Page：24 Pages | EMERSON-NETWORKPOWER 艾默生 | | ||
Universal Bushings 文件：105.3 Kbytes Page：1 Pages | HeycoHeyco. 海科 | |
VN2460产品属性
- 类型
描述
- 型号
VN2460
- 功能描述
MOSFET 600V 20Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SUPERTEX |
1203+ |
SOT-89 |
1582 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SUPERTEX |
22+ |
SOT89 |
100000 |
代理渠道/只做原装/可含税 |
|||
SUPERTEX |
24+ |
NA/ |
4850 |
原厂直销,现货供应,账期支持! |
|||
SUPERTEX |
24+ |
SOT89 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SUPERTEX |
1836+ |
SOT-89 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
SUPERTE |
24+ |
SOT89 |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
MICROCHIP/美国微芯 |
21+ |
SOT-89(SOT-89-3) |
10000 |
全新原装现货 |
|||
MICROCHIP(美国微芯) |
24+ |
SOT-89(SOT-89-3) |
541200 |
免费送样原盒原包现货一手渠道联系 |
|||
SUPERTE |
25+ |
SOT89 |
880000 |
明嘉莱只做原装正品现货 |
|||
MICROCHIP/美国微芯 |
21+ |
SOT-89(SOT-89-3) |
10000 |
只做原装,质量保证 |
VN2460芯片相关品牌
VN2460规格书下载地址
VN2460参数引脚图相关
- 安防监控系统
- 安防监控
- 安宝路
- zw10
- zigbee芯片
- zigbee模块
- z120
- xtr105
- xl4001
- x86架构
- x606
- wm7
- wimax网络
- wcdma手机
- w5500
- w300
- w230
- w200
- vp5
- voip技术
- VN5025AJ-E
- VN5016AJTR-E
- VN5016AJ-E
- VN5012AKTR-E
- VN5012AK-E
- VN5010AK-E
- VN460SPTR-E
- VN460SP-E
- VN4012L-G
- VN4012L
- VN4012
- VN380SP-E
- VN380SP
- VN380
- VN35AK
- VN35AB
- VN3515L
- VN3515
- VN34AK
- VN340SPTR-E
- VN340SPTR-33-E
- VN340SP-E
- VN340SP-33-E
- VN340SP
- VN340
- VN330SPTR-E
- VN330SPTR-32-E
- VN330SP-E
- VN330SP
- VN330
- VN3205
- VN31SP
- VN31-E
- VN31_04
- VN30NSP
- VN30N
- VN30AB
- VN3
- VN2460N8-G
- VN2460N3-G
- VN2450N8-G
- VN2450N3-G
- VN2450
- VN2410L-G-P013
- VN2410L-G
- VN2410L
- VN2410
- VN2406L-G
- VN2406L
- VN2406D
- VN2406
- VN22A
- VN2224N3-G
- VN2224
- VN2222LL-G
- VN2222L
- VN2222
- VN2210N3-G
- VN2210N2
- VN2210
- VN220
- VN21SP
- VN2110K1-G
- VN2110K1
- VN2110
- VN2106N3-G
- VN2106
- VN21_04
- VN20N
- VN-20-L
- VN-20-H
- VN20AN
- VN163200126X
- VN162100014X
- VN161600014X
- VN1304000091X
- VN1304000081X
- VN1206L-G
- VN1160T-E
- VN1160-1-E
VN2460数据表相关新闻
VMI高压光耦合器OC150G
VMI高压光耦合器OC150G
2024-5-10VN330SPTR-E
进口代理
2023-10-16VN330SPTR-E 电桥驱动器 汽车电脑版芯片 贴片HSOP-10
VN330SPTR-E
2022-4-28VN330SPTR-E 门驱动器 QUAD HIGH SIDE
原厂原装 正品现货 价格优势 有单必成
2022-4-24VMMK-2203-TR1G
VMMK-2203-TR1G
2021-6-22VMMK-1225-BLKG 射频结栅场效应晶体管(RF JFET)晶体管
VMMK-1225-BLKG 射频结栅场效应晶体管(RF JFET)晶体管
2021-1-25
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
