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位置：首页 > IC中文资料 > VN2460

VN2460价格

参考价格：￥5.8344

型号：VN2460N3-G 品牌：Microchip Technology 备注：这里有VN2460多少钱，2026年最近7天走势，今日出价，今日竞价，VN2460批发/采购报价，VN2460行情走势销售排行榜，VN2460报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VN2460

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

SUTEX

VN2460

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460

MOSFET, N-Channel Enhancement-Mode, 600V, 20 Ohm

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coeffici Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain;

MICROCHIP

微芯科技

VN2460

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

SUTEX

VN2460N3

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P002

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P002-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P003

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P003-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P013

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P013-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P014

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P014-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N8

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

SUTEX

VN2460N8-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N8VN2460N3-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460NW

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

SUTEX

VN2460_13

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3

N-Channel Enhancement-Mode Vertical DMOS FETs

MICROCHIP

微芯科技

VN2460N3-G

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP002

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP003

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP005

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP013

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP014

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N8-G

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N8-G

MOSFET 600V 20Ohm

MICROCHIP

微芯科技

TLV2460AID

FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN

文件：1.35418 Mbytes Page：54 Pages

TI

德州仪器

TLV2460AMJGB

FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN

文件：1.35418 Mbytes Page：54 Pages

TI

德州仪器

TLV2460AQDR

FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN

文件：1.35418 Mbytes Page：54 Pages

TI

德州仪器

VN2460产品属性

  • 类型

    描述

  • BVdss min (V)：

    600

  • Rds (on) max (Ohms)：

    20

  • CISSmax (pF)：

    150

  • Vgs(th) max (V)：

    4.0

  • Packages：

    3\\SOT-893\\TO-92

VN2460供应商更多...

更新时间：2026-5-18 12:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市华来深电子有限公司
VN2460N3-G
Superte
23+
TO-92
8560
受权代理!全新原装现货特价热卖!
询价
深圳市恒凯威科技开发有限公司
VN2460N8-G
MICROCHIP/美国微芯
21+
SOT-89(SOT-89-3)
10000
只做原装,质量保证
询价
深圳市富利微电子科技有限公司
VN2460N8-G
SUPERTE
25+
SOT89
30000
房间原装现货特价热卖,有单详谈
询价
深圳市拓亿芯电子有限公司
VN2460N8-G
MICROCHIP
25+
SOT89
16000
全新原装现货,假一赔十
询价
贸泽芯城（深圳）电子科技有限公司
VN2460N8-G
SUPERTEX
23+
SOT-89
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
中天科工半导体（深圳）有限公司
VN2460N8-G
MICROCHIP/微芯
25+
SOT89
32360
MICROCHIP/微芯全新特价VN2460N8-G即刻询购立享优惠#长期有货
询价
深圳市斌能达电子科技有限公司
VN2460N8-G
MICROCHIP/美国微芯
24+
SOT-89(SOT-89-3)
6000
全新原装深圳仓库现货有单必成
询价
深圳市美思瑞电子科技有限公司
VN2460N8-G
MICROCHIP/微芯
22+
SOT-89-3
12245
现货,原厂原装假一罚十!
询价
深圳市宇创芯科技有限公司
VN2460N8-G
MICROCHIP/微芯
24+
SOT89-3
9600
原装现货,优势供应,支持实单!
询价
深圳市禾兴威科技有限公司
VN2460N8-G
MICROCHIP/微芯
23+
SOT89
6800
原装正品,支持实单
询价

VN2460芯片相关品牌

VN2460规格书下载地址

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VN2460数据表相关新闻

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