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位置：首页 > IC中文资料第1473页 > VN2460

VN2460价格

参考价格：￥5.8344

型号：VN2460N3-G 品牌：Microchip Technology 备注：这里有VN2460多少钱，2025年最近7天走势，今日出价，今日竞价，VN2460批发/采购报价，VN2460行情走势销售排行榜，VN2460报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VN2460

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

SUTEX

VN2460

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460

MOSFET, N-Channel Enhancement-Mode, 600V, 20 Ohm

Microchip

微芯科技

VN2460N3

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

SUTEX

VN2460N3-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P002

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P002-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P003

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P003-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P013

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P013-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P014

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P014-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N8

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

SUTEX

VN2460N8-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N8VN2460N3-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460NW

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

SUTEX

VN2460_13

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3

N-Channel Enhancement-Mode Vertical DMOS FETs

Microchip

微芯科技

VN2460N3-G

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP002

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP003

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP005

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP013

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP014

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N8-G

MOSFET 600V 20Ohm

Microchip

微芯科技

VN2460N8-G

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

2460

Economical design, available with PC terminals or wire leads

• Economical design, available with PC terminals or wire leads • Batteries securely held in place to assure a positive connection and maintain a low contact resistance • Contact springs self-adjust to variations in battery length • Withstands shock and vibration • Available with solder lugs o

KEYSTONE

Keystone Electronics Corp.

2460A

ELECTRONIC IGNITION TIMING

FEATURES ■ Improved System Reliability ■ Internal Bypass Mode ■ Constant-Current Drive to Ignition Coil ■ 180 mJ Primary Coil Energy

ALLEGRO

2460

Rosemount??2460 System Hub for tank gauging systems

文件：3.43816 Mbytes Page：24 Pages

EMERSON-NETWORKPOWER

艾默生

2460

Passive GPS Antenna uFL - 9mm x 9mm - 2dBi gain

文件：80.09 Kbytes Page：2 Pages

Adafruit

2460

Universal Bushings

文件：105.3 Kbytes Page：1 Pages

Heyco

VN2460产品属性

  • 类型

    描述

  • 型号

    VN2460

  • 功能描述

    MOSFET 600V 20Ohm

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

VN2460供应商更多...

更新时间：2025-12-27 16:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市东来宝电子科技有限公司
VN2460N8
SUPERTEX
24+
SOT89
27950
郑重承诺只做原装进口现货
询价
深圳市一线半导体有限公司
VN2460L
SUPERTEX
24+
TO-92
300
询价
深圳市富利微电子科技有限公司
VN2460N8-G
SUPERTE
24+
SOT89
30000
房间原装现货特价热卖,有单详谈
询价
深圳市威雅利发展有限公司
VN2460N8-G
SUPERTEX
1203+
SOT-89
1582
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市恒凯威科技开发有限公司
VN2460N8-G
MICROCHIP/美国微芯
21+
SOT-89(SOT-89-3)
10000
只做原装,质量保证
询价
深圳市纳艾斯科技有限公司
VN2460N8-G
SUPERTE
24+
SOT89
8000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市宇创芯科技有限公司
VN2460N8-G
MICROCHIP/微芯
24+
SOT89-3
9600
原装现货,优势供应,支持实单!
询价
深圳诚思涵科技有限公司
VN2460N8
SUPERTEX
19+
SOT89
20000
1800
询价
深圳市高捷芯城科技有限公司
VN2460N3-G-P003
MICROCHIP(美国微芯)
24+
TO-92
9203
支持大陆交货,美金交易。原装现货库存。
询价
深圳市科恒伟业电子有限公司
VN2460N8
SUPERTEX
2450+
SOT89
8850
只做原装正品假一赔十为客户做到零风险!!
询价

VN2460芯片相关品牌

VN2460规格书下载地址

VN2460参数引脚图相关

VN2460数据表相关新闻

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