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位置：首页 > IC中文资料 > VN2460

VN2460价格

参考价格：￥5.8344

型号：VN2460N3-G 品牌：Microchip Technology 备注：这里有VN2460多少钱，2026年最近7天走势，今日出价，今日竞价，VN2460批发/采购报价，VN2460行情走势销售排行榜，VN2460报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VN2460

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

SUTEX

VN2460

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460

MOSFET, N-Channel Enhancement-Mode, 600V, 20 Ohm

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coeffici Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain;

MICROCHIP

微芯科技

VN2460

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

SUTEX

VN2460N3

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P002

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P002-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P003

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P003-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P013

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P013-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P014

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N3-P014-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N8

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

SUTEX

VN2460N8-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460N8VN2460N3-G

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN2460NW

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high

SUTEX

VN2460_13

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3

N-Channel Enhancement-Mode Vertical DMOS FETs

MICROCHIP

微芯科技

VN2460N3-G

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP002

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP003

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP005

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP013

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N3-GP014

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N8-G

N-Channel Enhancement-Mode Vertical DMOS FET

文件：727.55 Kbytes Page：6 Pages

SUTEX

VN2460N8-G

MOSFET 600V 20Ohm

MICROCHIP

微芯科技

TLV2460AID

FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN

文件：1.35418 Mbytes Page：54 Pages

TI

德州仪器

TLV2460AMJGB

FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN

文件：1.35418 Mbytes Page：54 Pages

TI

德州仪器

TLV2460AQDR

FAMILY OF LOW-POWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN

文件：1.35418 Mbytes Page：54 Pages

TI

德州仪器

VN2460产品属性

  • 类型

    描述

  • BVdss min (V)：

    600

  • Rds (on) max (Ohms)：

    20

  • CISSmax (pF)：

    150

  • Vgs(th) max (V)：

    4.0

  • Packages：

    3\\SOT-893\\TO-92

VN2460供应商更多...

更新时间：2026-7-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
VN2460N3-G-P014
Microchip Technology / Atmel
25+
TO-92-3
6843
样件支持,可原厂排单订货!
询价
深圳市得捷芯城科技有限公司
VN2460N3-G-P014
Microchip Technology / Atmel
25+
TO-92-3
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
深圳市纳艾斯科技有限公司
VN2460N8-G
SUPERTE
24+
SOT89
8000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市河锋鑫科技有限公司
VN2460N8G
Microchip
22+
TO243AA
9000
原厂渠道,现货配单
询价
深圳市华睿芯科技有限公司
VN2460N8
SUPERTEX
24+
SOT89
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
中天科工半导体（深圳）有限公司
VN2460N8-G
MICROCHIP/微芯
25+
SOT89
32360
MICROCHIP/微芯全新特价VN2460N8-G即刻询购立享优惠#长期有货
询价
深圳市科恒伟业电子有限公司
VN2460N8-G
SUPERTEX
2450+
NA
9850
只做原装正品现货!或订货假一赔十!
询价
深圳诚思涵科技有限公司
VN2460N8
SUPERTEX
19+
SOT89
20000
1800
询价
深圳市恒凯威科技开发有限公司
VN2460N8-G
MICROCHIP/美国微芯
21+
SOT-89(SOT-89-3)
10000
只做原装,质量保证
询价
深圳市美思瑞电子科技有限公司
VN2460N8-G
MICROCHIP/微芯
22+
SOT-89-3
12245
现货,原厂原装假一罚十!
询价

VN2460芯片相关品牌

VN2460规格书下载地址

VN2460参数引脚图相关

VN2460数据表相关新闻

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