N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

MOSFET, N-Channel Enhancement-Mode, 240V, 10 Ohm

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient in Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain;

N-Channel Enhancement-Mode Vertical DMOS FET

文件：780.24 Kbytes Page：12 Pages

N-Channel 240-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 3.5 Ω ● Secondary Breakdown Free: 260 V ● Low Power/Voltage Driven ● Low Input and Output Leakage ● Excellent Thermal Stability BENEFITS ● Low Offset Voltage ● Full-Voltage Operation ● Easily Driven Without Buffer ● Low Error Voltage ● No High-Temperature “

TMOS FET Transistor

TMOS FET Transistor N-Channel - Enhancement

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

Small Signal MOSFET 240 V, 200 mA, N?묬hannel TO??2

Small Signal MOSFET 240 V, 200 mA, N−Channel TO−92 Features • Pb−Free Packages are Available*

N-Channel Enhancement-Mode

Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications ❏ Motor

Small Signal MOSFET 240V 200mA 10 Ohm Single N-Channel TO-92 Logic Level

Small Signal MOSFET 240 V, 200 mA, N-Channel TO-92 • Pb-Free Packages are Available;

TMOS FET Transistor

TMOS FET Transistor N-Channel - Enhancement

TMOS FET Transistor N-Channel - Enhancement

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

N-Channel 240-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 3.5 Ω ● Secondary Breakdown Free: 260 V ● Low Power/Voltage Driven ● Low Input and Output Leakage ● Excellent Thermal Stability BENEFITS ● Low Offset Voltage ● Full-Voltage Operation ● Easily Driven Without Buffer ● Low Error Voltage ● No High-Temperature “

N-Channel Enhancement-Mode Vertical DMOS FET

文件：780.24 Kbytes Page：12 Pages

N-Channel Enhancement-Mode Vertical DMOS FET

文件：780.24 Kbytes Page：12 Pages

N-Channel Enhancement-Mode Vertical DMOS FET

文件：780.24 Kbytes Page：12 Pages

Silicon NPN Transistor High Voltage Amp/Driver (Comp to NTE2411)

Description: The NTE2410 is a silicon NPN transistor in an SOT–23 type surface mount case designed for use in high voltage applications.

2.45GHz RF power amplifier and T/R switch

DESCRIPTION The SA2410 is a GaAs monolithic power amplifier with an integrated T/R switch designed to meet requirements for 802.11 (WLAN). The SA2410 uses an on–chip 4 GHz oscillator to generate the negative bias, thus eliminating the need for a negative supply. It operates from 3V to 5.5V and co

THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

Fast Recovery Dual Diode Modules 100 Amperes/600-1200 Volts

文件：72.58 Kbytes Page：4 Pages