N-Channel 240-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 3.5 Ω ● Secondary Breakdown Free: 260 V ● Low Power/Voltage Driven ● Low Input and Output Leakage ● Excellent Thermal Stability BENEFITS ● Low Offset Voltage ● Full-Voltage Operation ● Easily Driven Without Buffer ● Low Error Voltage ● No High-Temperature “

TMOS FET Transistor

TMOS FET Transistor N-Channel - Enhancement

Small Signal MOSFET 240 V, 200 mA, N?묬hannel TO??2

Small Signal MOSFET 240 V, 200 mA, N−Channel TO−92 Features • Pb−Free Packages are Available*

N-Channel Enhancement-Mode

Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications ❏ Motor

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

Small Signal MOSFET 240V 200mA 10 Ohm Single N-Channel TO-92 Logic Level

Small Signal MOSFET 240 V, 200 mA, N-Channel TO-92 • Pb-Free Packages are Available;

TMOS FET Transistor

TMOS FET Transistor N-Channel - Enhancement

TMOS FET Transistor N-Channel - Enhancement

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

N-Channel 240-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 3.5 Ω ● Secondary Breakdown Free: 260 V ● Low Power/Voltage Driven ● Low Input and Output Leakage ● Excellent Thermal Stability BENEFITS ● Low Offset Voltage ● Full-Voltage Operation ● Easily Driven Without Buffer ● Low Error Voltage ● No High-Temperature “

N-Channel Enhancement-Mode Vertical DMOS FET

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N-Channel Enhancement-Mode Vertical DMOS FET

文件：780.24 Kbytes Page：12 Pages

N-Channel Enhancement-Mode Vertical DMOS FET

文件：780.24 Kbytes Page：12 Pages

Silicon NPN Transistor High Voltage Amp/Driver (Comp to NTE2411)

Description: The NTE2410 is a silicon NPN transistor in an SOT–23 type surface mount case designed for use in high voltage applications.

2.45GHz RF power amplifier and T/R switch

DESCRIPTION The SA2410 is a GaAs monolithic power amplifier with an integrated T/R switch designed to meet requirements for 802.11 (WLAN). The SA2410 uses an on–chip 4 GHz oscillator to generate the negative bias, thus eliminating the need for a negative supply. It operates from 3V to 5.5V and co

THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

Fast Recovery Dual Diode Modules 100 Amperes/600-1200 Volts

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