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VN10KN3价格
参考价格：￥1.4716
型号：VN10KN3-G 品牌：Microchip 备注：这里有VN10KN3多少钱，2025年最近7天走势，今日出价，今日竞价，VN10KN3批发/采购报价，VN10KN3行情走势销售排行榜，VN10KN3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VN10KN3 | N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs [TOPAZ SEMICONDUCTOR] N-Channel Enhancement-Mode Vertical DMOS FETs | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
VN10KN3 | N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | |
VN10KN3 | N-Channel Enhancement-Mode Vertical DMOS FETs N-Channel Enhancement-Mode Vertical DMOS FETs | SUTEX | | |
VN10KN3 | N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | |
VN10KN3 | N-Channel Enhancement-Mode Vertical DMOS FET | Microchip 微芯科技 | | |
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | |
VN10KN3产品属性
- 类型
描述
- 型号
VN10KN3
- 功能描述
MOSFET 60V 5Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SUPERTEX |
24+ |
NA/ |
4709 |
原厂直销,现货供应,账期支持! |
|||
SUPERTE |
24+ |
TO-92 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SUPERTEX |
22+ |
TO-92 |
100000 |
代理渠道/只做原装/可含税 |
|||
MICROCHIP/微芯 |
24+ |
TO-92-3 |
860000 |
明嘉莱只做原装正品现货 |
|||
Microchip |
22+ |
TO2263 TO923 (TO226AA) () |
9000 |
原厂渠道,现货配单 |
|||
SILICONI/矽睿科技 |
专业铁帽 |
TO |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
MICROCHIP/微芯 |
23+ |
1000 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
MICROCHIP/微芯 |
2406+ |
TO-92 |
33000 |
诚信经营!进口原装!量大价优! |
|||
MICROCHIP(美国微芯) |
24+ |
TO-92 |
9203 |
支持大陆交货,美金交易。原装现货库存。 |
|||
SUPERTEX |
24+ |
TO-92 |
6000 |
VN10KN3规格书下载地址
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