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VN10KN3价格
参考价格：￥1.4716
型号：VN10KN3-G 品牌：Microchip 备注：这里有VN10KN3多少钱，2026年最近7天走势，今日出价，今日竞价，VN10KN3批发/采购报价，VN10KN3行情走势销售排行榜，VN10KN3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VN10KN3 | N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs [TOPAZ SEMICONDUCTOR] N-Channel Enhancement-Mode Vertical DMOS FETs | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
VN10KN3 | N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | |
VN10KN3 | N-Channel Enhancement-Mode Vertical DMOS FETs N-Channel Enhancement-Mode Vertical DMOS FETs | SUTEX | | |
VN10KN3 | N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | |
VN10KN3 | N-Channel Enhancement-Mode Vertical DMOS FET General Description\nThis enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and posi ►Free from secondary breakdown\n►Low power drive requirement\n►Ease of paralleling\n►Low CISS and fast switching speeds\n►Excellent thermal stability\n►Integral source-drain diode\n►High input impedance and high gain\nApplications\n► Motor controls\n► Converters\n► Amplifers\n► Switches\n► Power sup; | MICROCHIP 微芯科技 | | |
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | |
VN10KN3产品属性
- 类型
描述
- 型号
VN10KN3
- 功能描述
MOSFET 60V 5Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microchip Technology / Atmel |
25+ |
TO-92-3 |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
Microchip Technology / Atmel |
25+ |
TO-92-3 |
6843 |
样件支持,可原厂排单订货! |
|||
SUPERTE |
24+ |
TO-92 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
Microchip |
26+ |
TO-92-3 |
8000 |
原装现货 极速发货 一站式原装元器件BOM配单 |
|||
MICROCHIP/微芯 |
2406+ |
TO-92 |
33000 |
诚信经营!进口原装!量大价优! |
|||
Microchip |
23+ |
TO-92-3 |
1970 |
正规渠道,只有原装! |
|||
SUPERTEX |
24+ |
TO-92 |
6000 |
||||
Microchip |
23+ |
TO-92-3 |
10000 |
公司只做原装，可来电咨询 |
|||
MICROCHIP |
25 |
||||||
MICROCHIP(美国微芯) |
2447 |
TO-92-3 |
31500 |
1000个/袋一级代理专营品牌!原装正品,优势现货,长 |
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