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VN10KN价格

参考价格:¥1.4716

型号:VN10KN3-G 品牌:Microchip 备注:这里有VN10KN多少钱,2026年最近7天走势,今日出价,今日竞价,VN10KN批发/采购报价,VN10KN行情走势销售排行榜,VN10KN报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VN10KN

N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-Channel Enhancement-Mode Vertical DMOS FETs

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

SUTEX

N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-Channel Enhancement-Mode Vertical DMOS FETs

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Enhancement-Mode Vertical DMOS FETs

N-Channel Enhancement-Mode Vertical DMOS FETs

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description\nThis enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and posi ►Free from secondary breakdown\n►Low power drive requirement\n►Ease of paralleling\n►Low CISS and fast switching speeds\n►Excellent thermal stability\n►Integral source-drain diode\n►High input impedance and high gain\nApplications\n► Motor controls\n► Converters\n► Amplifers\n► Switches\n► Power sup;

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

N-Channel Enhancement-Mode Vertical DMOS FETs

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

MICROCHIP

微芯科技

VN10KN产品属性

  • 类型

    描述

  • 型号

    VN10KN

  • 功能描述

    N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

更新时间:2026-8-1 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Microchip Technology / Atmel
25+
TO-92-3
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
Microchip Technology / Atmel
25+
TO-92-3
6843
样件支持,可原厂排单订货!
SUPERTE
24+
TO-92
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SUPERTEXINC
18+
TO-92
1479
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Microchip
26+
TO-92-3
8000
原装现货 极速发货 一站式原装元器件BOM配单
Microchip(微芯)
26+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
MICROCHIP/微芯
2406+
TO-92
33000
诚信经营!进口原装!量大价优!
Microchip
23+
TO-92-3
1970
正规渠道,只有原装!
SUPERTEX
24+
TO-92
6000
SUPERTEXINC
22+
TO-92
20000
公司只做原装 品质保证

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