Magnetically activated digital vane switch in a rugged, overmolded plastic housing with three pins or 3-wire harness

VANE SWITCHES Magneticallyactivated digital vane switch in a rugged, overmolded plastic housing with three pins or 3-wire harness. ■ Available in Two Operating Temperature Ranges ■ Immune From Moisture and Dust ■ Reliable and Repeatable ■ No Mechanical Contacts to Wear Out ■ Operate From 5 t

Magnetically activated digital vane sensor in a rugged

文件：261.649 Kbytes Page：2 Pages

霍尔效应位置传感器

Magnetically activated digital vane switch in a rugged, overmolded plastic housing with three pins or 3-wire harness

VANE SWITCHES Magneticallyactivated digital vane switch in a rugged, overmolded plastic housing with three pins or 3-wire harness. ■ Available in Two Operating Temperature Ranges ■ Immune From Moisture and Dust ■ Reliable and Repeatable ■ No Mechanical Contacts to Wear Out ■ Operate From 5 t

Magnetically activated digital vane switch in a rugged, overmolded plastic housing with three pins or 3-wire harness

VANE SWITCHES Magneticallyactivated digital vane switch in a rugged, overmolded plastic housing with three pins or 3-wire harness. ■ Available in Two Operating Temperature Ranges ■ Immune From Moisture and Dust ■ Reliable and Repeatable ■ No Mechanical Contacts to Wear Out ■ Operate From 5 t

Magnetically activated digital vane switch in a rugged, overmolded plastic housing with three pins or 3-wire harness

VANE SWITCHES Magneticallyactivated digital vane switch in a rugged, overmolded plastic housing with three pins or 3-wire harness. ■ Available in Two Operating Temperature Ranges ■ Immune From Moisture and Dust ■ Reliable and Repeatable ■ No Mechanical Contacts to Wear Out ■ Operate From 5 t

Magnetically activated digital vane switch in a rugged, overmolded plastic housing with three pins or 3-wire harness

VANE SWITCHES Magneticallyactivated digital vane switch in a rugged, overmolded plastic housing with three pins or 3-wire harness. ■ Available in Two Operating Temperature Ranges ■ Immune From Moisture and Dust ■ Reliable and Repeatable ■ No Mechanical Contacts to Wear Out ■ Operate From 5 t

接近传感器

封装/外壳：开槽型壳体 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SENSOR HALL DIGITAL PC PIN 传感器，变送器 磁性传感器 - 位置，接近，速度（模块）- 工业

Magnetically activated digital vane sensor in a rugged

文件：261.649 Kbytes Page：2 Pages

Magnetically activated digital vane sensor in a rugged

文件：261.649 Kbytes Page：2 Pages

Magnetically activated digital vane sensor in a rugged

文件：261.649 Kbytes Page：2 Pages

封装/外壳：开槽型壳体 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SENSOR HALL DIGITAL WIRE LEADS 传感器，变送器 磁性传感器 - 位置，接近，速度（模块）- 工业

接近传感器

Magnetically activated digital vane sensor in a rugged

文件：261.649 Kbytes Page：2 Pages

Photo Interrupters

Photo Interrupters Overview CNA1015 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices