NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VMB40-12F is Designed for 12.5 V, Medium Band Class C Applications. FEATURES: • Common Emitter • PG = 10 dB @ 40W/175MHz • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

文件：18.64 Kbytes Page：1 Pages

NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

文件：18.64 Kbytes Page：1 Pages

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VMB40-12S is Designed for 12.5 V, Medium Band Class C Application. FEATURES: • Common Emitter • PG = 10 dB at 40 W/175 MHz • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The VHB40-12F is Designed for Class C Amplifier Applications in VHF Mobile Radios. FEATURES: · PG = 9.5 dB Typ. at 40 W /175 MHz · hC = 60 Typ. at 40 W /175 MHz · Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB40-12S is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 8.5 dB at 40 W/175 MHz • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VLB40-12F is a common Emitter transistor, designed for VHF FM amplifier operations in military, commercial and amateur communication equipment. FEATURES: • PG = 13 dB min. at 40 W/50 MHz • Omnigold™ Metalization System