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位置：首页 > IC中文资料第8296页 > VJ0402A

VJ0402A价格

参考价格：￥0.0509

型号：VJ0402A0R5BXJCW1BC 品牌：Vishay 备注：这里有VJ0402A多少钱，2025年最近7天走势，今日出价，今日竞价，VJ0402A批发/采购报价，VJ0402A行情走势销售排行榜，VJ0402A报价。
型号 功能描述 生产厂家&企业 LOGO 操作
VJ0402A

SurfaceMountMultilayerCeramicChipCapacitorsforHighReliabilityApplications

文件：342.37 Kbytes Page：6 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101FXQCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101FXQPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101FXQTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101FXSCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101FXSPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101FXSTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101FXYCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101FXYPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101FXYTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101GXQCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101GXQPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101GXQTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101GXSCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101GXSPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101GXSTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101GXYCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101GXYPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101GXYTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101JXQCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101JXQPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101JXQTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101JXSCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101JXSPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101JXSTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101JXYCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101JXYPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101JXYTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101KXQCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101KXQPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101KXQTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101KXSCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101KXSPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101KXSTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101KXYCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101KXYPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A101KXYTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102FXQCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102FXQPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102FXQTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102FXSCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102FXSPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102FXSTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102FXYCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102FXYPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102FXYTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102GXQCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102GXQPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102GXQTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102GXSCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102GXSPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102GXSTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102GXYCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102GXYPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102GXYTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102JXQCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102JXQPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102JXQTW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102JXSCW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
VJ0402A102JXSPW1BC

SurfaceMountMultilayerCeramicChipCapacitorsforCommodityApplications

FEATURES •Availablefrom0402to1210bodysizes •UltrastableC0G(NP0)dielectric •HighcapacitanceinX5R,X7R •Ni-barrierwith100%tinterminations •Drysheettechnologyprocess •BaseMetalElectrodesystem(BME) •Materialcategorization: fordefinitionsofcomplianceplea

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

VJ0402A产品属性

  • 类型

    描述

  • 型号

    VJ0402A

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Surface Mount Multilayer Ceramic Chip Capacitors for High Reliability Applications

VJ0402A供应商更多...

更新时间：2025-7-19 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
VJ0402A180JXACW1BC
VISHAY/威世
24+
NA/
53250
原装现货,当天可交货,原型号开票
询价
深圳市高捷芯城科技有限公司
VJ0402A8R2DXXPW1BC
VISHAY(威世)
24+
0402
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市商琪科技有限公司
VJ0402A331GXQCW1BC
VISHAY/威世
2025+
SMD
16854648
代理销售VISHAY/威世原装现货
询价
深圳市金芯世纪电子有限公司
VJ0402A100JXACW1BC
VISHAY/威世
22+
0402(1005metric)
100000
代理渠道/只做原装/可含税
询价
深圳市明嘉莱科技有限公司
VJ0402A2R2CXACW1BC
VISHAY/威世
24+
CERAMIC
990000
明嘉莱只做原装正品现货
询价
深圳市科恒伟业电子有限公司
VJ0402A101JXAAC
VISHAY GROUP
2450+
SOP
6540
只做原厂原装正品终端客户免费申请样品
询价
深圳市威雅利发展有限公司
VJ0402A2R2BXAC
VISHAY
2008+
SMD
17352
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市振宏微科技有限公司
VJ0402A8R2BXXCW1BC
VISH
23+
NA
36486
专做原装正品,假一罚百!
询价
深圳市恒凯威科技开发有限公司
VJ0402A180JXJCW1BC
VITRAMONVISHAY
21+
NA
12820
只做原装,质量保证
询价
深圳市坤融电子科技有限公司
VJ0402A101KXBAC31
VISHAY/威世
24+
5000
只做原厂渠道 可追溯货源
询价

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