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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VIT3080S | Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS | VISHAYVishay Siliconix 威世威世科技公司 |   | |
VIT3080S | Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VISHAYVishay Siliconix 威世威世科技公司 | | |
VIT3080S | Trench MOS Barrier Schottky Rectifier 文件：125.84 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
VIT3080S | Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A | VISHAYVishay Siliconix 威世威世科技公司 | | |
Trench MOS Schottky technology FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：150.87 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：160.94 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：148.44 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：148.44 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR） 描述：DIODE SCHOTTKY 60V 10A TO262AA 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 30A 80V TO-262AA 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
Inst, 1 Pr #14 Str BC, PVC-NYL Ins E1, OS, Blk PVC Jkt, 600V TC 150V NPLF THHN OR THWN Product Description UL Instrumentation, 1 Pair 14AWG (7x22) Bare Copper, PVC-NYL Insulation E1 Color Code, Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC 150V NPLF THHN OR THWN 90C Dry 75C Wet SUN RES DIR BUR | BELDEN 百通 | | ||
Pry Out Plugs 文件：117.99 Kbytes Page：1 Pages | HEYCO | | ||
Customer Specification 文件：70.59 Kbytes Page：3 Pages | ALPHAWIRE | | ||
Industrial VRS Magnetic Speed Sensors 文件：161.59 Kbytes Page：8 Pages | HONEYWELL 霍尼韦尔 | | ||
THRU HOLE (THM) & SURFACE MOUNT (SMT) COIN CELL RETAINERS 文件：392.48 Kbytes Page：1 Pages | KEYSTONE Keystone Electronics Corp. | |
VIT3080S产品属性
- 类型
描述
- 型号
VIT3080S
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Semiconductor Diodes Di |
22+ |
TO262AA |
9000 |
原厂渠道,现货配单 |
|||
VISHAY/威世 |
23+ |
TO-262AA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VISHAY/威世 |
24+ |
TO262 |
22055 |
郑重承诺只做原装进口现货 |
|||
Vishay General Semiconductor - |
25+ |
TO-262AA |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VISHAY |
25+ |
TO-262 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
VIT3080S规格书下载地址
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DdatasheetPDF页码索引
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