Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：148.87 Kbytes Page：5 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：148.87 Kbytes Page：5 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maxim

Low forward voltage drop, low power losses

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：173.59 Kbytes Page：5 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：173.59 Kbytes Page：5 Pages

封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR） 描述：DIODE SCHOTTKY 60V 15A TO262AA 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR） 描述：DIODE SCHOTTKY 60V 15A TO262AA 分立半导体产品 二极管 - 整流器 - 单

WASHERS AND NUTS

[KEYSTONE] FIBRE SHOULDER WASHERS HEX MACHINE NUTS NYLON SHOULDER WASHER/BUSHINGS BLIND CAPTIVE NUTS - PRESS FIT METRIC MACHINE NUTS

High-performance Optical Mouse Sensor

Description The ADNS-3060 is a high performance addition to Agilent’s popular ADNS family of optical mouse sensors. The ADNS-3060 is based on a new, faster architecture with improved navigation. The sensor is capable of sensing high speed mouse motion - up to 40 inches per second and acceler

Pry Out Plugs

文件：117.99 Kbytes Page：1 Pages

N-Channel Trench Power MOSFET

文件：654.41 Kbytes Page：6 Pages

Optical Mouse Sensor

文件：107.52 Kbytes Page：1 Pages