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VIT1080S-E3价格
参考价格：￥3.2162
型号：VIT1080S-E3/4W 品牌：Vishay Semiconductor Dio 备注：这里有VIT1080S-E3多少钱，2025年最近7天走势，今日出价，今日竞价，VIT1080S-E3批发/采购报价，VIT1080S-E3行情走势销售排行榜，VIT1080S-E3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VIT1080S-E3 | Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-2 | VishayVishay Siliconix 威世威世科技公司 |   | |
VIT1080S-E3 | Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世威世科技公司 | | |
VIT1080S-E3 | Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | |
Trench MOS Barrier Schottky Rectifier 文件：148.38 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：带盒（TB） 描述：DIODE SCHOTTKY 80V 10A TO262AA 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
Trench MOS Barrier Schottky Rectifier 文件：148.38 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter | ISC 无锡固电 | | ||
Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-2 | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-2 | VishayVishay Siliconix 威世威世科技公司 | |
VIT1080S-E3产品属性
- 类型
描述
- 型号
VIT1080S-E3
- 功能描述
肖特基二极管与整流器 10A 80V Single TrenchMOS
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Semiconductor Diodes Di |
22+ |
TO262AA |
9000 |
原厂渠道,现货配单 |
|||
VISHAY/威世 |
23+ |
TO-262AA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
Vishay General Semiconductor - |
25+ |
TO-262AA |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
24+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VISHAY |
25+ |
TO-262 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
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