SMPS PRIMARY I.C.

DESCRIPTION VIPer20/20A, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (620V or 700V / 0.5A). Typical applications cover off line power supplies with a secondary po

SMPS PRIMARY I.C.

SMPS PRIMARY I.C.

Description VIPer20-E/DIP-E, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized, high voltage, Vertical Power MOSFET (620V/ 0.5A). Typical applications cover offline power supplies with a secondary power capability of 10W

SMPS PRIMARY I.C.

DESCRIPTION VIPer20/20A, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (620V or 700V / 0.5A). Typical applications cover off line power supplies with a secondary po

SMPS primary I.C.

Description All the devices are made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized, high voltage, Vertical Power MOSFET (700V/ 0.5A). Typical applications cover offline power supplies with a secondary power capability of

SMPS PRIMARY I.C.

DESCRIPTION VIPer20/20A, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (620V or 700V / 0.5A). Typical applications cover off line power supplies with a secondary po

SMPS primary I.C.

Description All the devices are made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized, high voltage, Vertical Power MOSFET (700V/ 0.5A). Typical applications cover offline power supplies with a secondary power capability of

SMPS primary I.C.

Description All the devices are made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized, high voltage, Vertical Power MOSFET (700V/ 0.5A). Typical applications cover offline power supplies with a secondary power capability of

SMPS PRIMARY I.C.

DESCRIPTION VIPer20/20A, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (620V or 700V / 0.5A). Typical applications cover off line power supplies with a secondary po

SMPS primary I.C.

Description All the devices are made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized, high voltage, Vertical Power MOSFET (700V/ 0.5A). Typical applications cover offline power supplies with a secondary power capability of

SMPS PRIMARY I.C.

DESCRIPTION VIPer20B combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (400V 1.3A). Typical applications cover off line power supplies with a secondary max power capability of 30W. It is compatible fro

SMPS PRIMARY I.C.

DESCRIPTION VIPer20B combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (400V 1.3A). Typical applications cover off line power supplies with a secondary max power capability of 30W. It is compatible fro

SMPS PRIMARY I.C.

DESCRIPTION VIPer20/20A, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (620V or 700V / 0.5A). Typical applications cover off line power supplies with a secondary po

SMPS PRIMARY I.C.

Description VIPer20-E/DIP-E, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized, high voltage, Vertical Power MOSFET (620V/ 0.5A). Typical applications cover offline power supplies with a secondary power capability of 10W

SMPS PRIMARY I.C.

Description VIPer20-E/DIP-E, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized, high voltage, Vertical Power MOSFET (620V/ 0.5A). Typical applications cover offline power supplies with a secondary power capability of 10W

SMPS PRIMARY I.C.

DESCRIPTION VIPer20/20A, made using VIPower M0 Technology, combines on the same silicon chip a state-of-the-art PWM circuit together with an optimized high voltage avalanche rugged Vertical Power MOSFET (620V or 700V / 0.5A). Typical applications cover off line power supplies with a secondary po

封装/外壳：Pentawatt-5 HV（弯曲和错列引线） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC OFFLIN CONV FLBACK 5PENTAWATT 集成电路（IC） AC DC 转换器，离线开关

封装/外壳：8-DIP（0.300"，7.62mm） 包装：散装 描述：IC OFFLINE SWITCH FLYBACK 8DIP 集成电路（IC） AC DC 转换器，离线开关

Fixed frequency off line converter

SMPS PRIMARY I.C.