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VI40150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

文件:168.66 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VI40150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.16 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VI40150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:130.46 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VI40150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:133.51 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VI40150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier5

文件:163.73 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VI40150C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:158.4 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VI40150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB

VISHAYVishay Siliconix

威世威世科技公司

Low forward voltage drop, low power losses

文件:157.16 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.73 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

文件:168.66 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.16 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier5

文件:163.73 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.73 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

文件:168.66 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-262-3,长引线,I²Pak,TO-262AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 40A 150V TO-262AA 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:130.46 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-262-3,长引线,I²Pak,TO-262AA 包装:卷带(TR) 描述:DIODE SCHOTTKY 40A 150V TO-262AA 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

整流器 40A,150V,TRENCH SKY RECT.

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:130.46 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Toroidal Surface Mount Inductors

DESCRIPTION The 4000 series is a range of surface mount toroidal inductors designed for use in switching power supplies and DC/DC converters. The parts are ideal for applications requiring low profile compact components in a surface mount package. FEATURES ■ 3.3µH to 330µH ■ Surface Mounting

CANDD

MBRB40150CT SCHOTTKY RECTIFIER

Features 150℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free

SMCDIODE

桑德斯微电子

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual center tap Schottky rectifiers suited for high frequency switch mode power supply. Packaged in TO-247, TO-220AB and D2PAK, this devices is intended for use to enhance the reliability of the application. FEATURES AND BENEFITS ■ HIGH JUNCTION TEMPERATURE CAPABILITY

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual center tap Schottky rectifiers suited for high frequency switch mode power supply. Packaged in TO-247, TO-220AB and D2PAK, this devices is intended for use to enhance the reliability of the application. FEATURES AND BENEFITS ■ HIGH JUNCTION TEMPERATURE CAPABILITY

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual center tap Schottky rectifiers suited for high frequency switch mode power supply. Packaged in TO-247, TO-220AB and D2PAK, this devices is intended for use to enhance the reliability of the application. FEATURES AND BENEFITS ■ HIGH JUNCTION TEMPERATURE CAPABILITY

STMICROELECTRONICS

意法半导体

VI40150C产品属性

  • 类型

    描述

  • 型号

    VI40150C

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

更新时间:2026-3-18 10:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Vishay Semiconductor Diodes Di
22+
TO262AA
9000
原厂渠道,现货配单
VISHAY
22+
TO-262
20000
公司只做原装 品质保证
24+
QFP
172
HIT
20+
QFP
500
样品可出,优势库存欢迎实单
24+
N/A
46000
一级代理-主营优势-实惠价格-不悔选择
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
VISHAY
26+
TO-262
12000
原装,正品
VISHAY原装
24+
TO-262
30980
原装现货/放心购买
VISHAY原装
25+23+
TO-262
23155
绝对原装正品全新进口深圳现货
VISHAY
24+
TO-262
8000
新到现货,只做全新原装正品

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