Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

Ultra Low VF = 0.56 V at IF = 5 A   FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum,

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

Ultra Low VF = 0.56 V at IF = 5 A   FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum,

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：169.29 Kbytes Page：5 Pages

封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 150V TO262 分立半导体产品 二极管 - 整流器 - 阵列

肖特基二极管与整流器 30 Amp 150 Volt Dual TrenchMOS

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：163.6 Kbytes Page：5 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：169.29 Kbytes Page：5 Pages